Publication: Space-Charge-Limited Dark Injection (SCL DI) transient measurements
Date
2010
Authors
Yap B.K.
Koh S.P.
Tiong S.K.
Ong C.N.
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Abstract
It is not an easy task to probe the mobility of nanoscale thin layers without using expensive and sophisticated equipments such as Time-of-flight photocurrent charge carrier mobility measurement. We present here a powerful yet cost-effective technique, namely the Space-Charge-Limited Dark Injection (SCL DI) Transient Measurement that allows us to confirm an ohmic injecting interface, to determine the mobility values of the bulk materials and to study the injection efficiency of the interfaces of the semiconductor materials. � 2010 IEEE.
Description
Keywords
Semiconductor materials , Transient analysis , Bulk materials , Charge-carrier mobility , Dark injection , Injection efficiency , Mobility value , Nano scale , Space-charge-limited , Thin layers , Time-of-flight photocurrents , Transient measurement , Carrier mobility