Publication: C45 ultra low k wafer technology with Cu wire bonding
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Date
2010
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Abstract
As gold price continues to move in an overall rising trend, conversion to Cu wire has been given great focus as the main effort for cost reduction. Cu is a good alternative due to 26% lower electrical resistivity than Au, hence much higher electrical conductivity. However, Cu free-air-ball and bonded ball hardness are 34% and 60% higher than that of Au, hence increases the stress on bond pad and chip. Although Cu wire price is generally only 5 to 10% of Au wire cost depending on wire diameter, but bonding with a much harder material like Cu requires great characterization effort due to the a much higher level of unknowns and complexities, especially when dealing with ultra fine pitch and ultra low k wafer technology. � 2010 IEEE.
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Keywords
Cost reduction , Electric conductivity , Industrial electronics , Manufacture , Technology , Wire , Bond pad , Electrical conductivity , Electrical resistivity , Gold prices , Ultra fine pitch , Ultra low-k , Wafer technology , Wire bonding , Wire diameter , Wafer bonding