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C45 ultra low k wafer technology with Cu wire bonding

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dc.citedby0
dc.contributor.authorLeng E.P.en_US
dc.contributor.authorSiong C.T.en_US
dc.contributor.authorSeong L.B.en_US
dc.contributor.authorLeong P.en_US
dc.contributor.authorGunasekaranen_US
dc.contributor.authorSong J.en_US
dc.contributor.authorMock K.en_US
dc.contributor.authorSiew C.en_US
dc.contributor.authorSivakumaren_US
dc.contributor.authorKid W.B.en_US
dc.contributor.authorWeily C.en_US
dc.contributor.authorid26423002500en_US
dc.contributor.authorid24725638500en_US
dc.contributor.authorid36004755800en_US
dc.contributor.authorid37018502900en_US
dc.contributor.authorid37018118100en_US
dc.contributor.authorid55500876000en_US
dc.contributor.authorid37018607700en_US
dc.contributor.authorid37018745500en_US
dc.contributor.authorid37018804400en_US
dc.contributor.authorid36992192300en_US
dc.contributor.authorid36992593400en_US
dc.date.accessioned2023-12-29T07:49:41Z
dc.date.available2023-12-29T07:49:41Z
dc.date.issued2010
dc.description.abstractAs gold price continues to move in an overall rising trend, conversion to Cu wire has been given great focus as the main effort for cost reduction. Cu is a good alternative due to 26% lower electrical resistivity than Au, hence much higher electrical conductivity. However, Cu free-air-ball and bonded ball hardness are 34% and 60% higher than that of Au, hence increases the stress on bond pad and chip. Although Cu wire price is generally only 5 to 10% of Au wire cost depending on wire diameter, but bonding with a much harder material like Cu requires great characterization effort due to the a much higher level of unknowns and complexities, especially when dealing with ultra fine pitch and ultra low k wafer technology. � 2010 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo5746739
dc.identifier.doi10.1109/IEMT.2010.5746739
dc.identifier.scopus2-s2.0-79955771481
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-79955771481&doi=10.1109%2fIEMT.2010.5746739&partnerID=40&md5=6edae2fdf5e1d3fe4e112b91c95f80f6
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30575
dc.sourceScopus
dc.sourcetitleProceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
dc.subjectCost reduction
dc.subjectElectric conductivity
dc.subjectIndustrial electronics
dc.subjectManufacture
dc.subjectTechnology
dc.subjectWire
dc.subjectBond pad
dc.subjectElectrical conductivity
dc.subjectElectrical resistivity
dc.subjectGold prices
dc.subjectUltra fine pitch
dc.subjectUltra low-k
dc.subjectWafer technology
dc.subjectWire bonding
dc.subjectWire diameter
dc.subjectWafer bonding
dc.titleC45 ultra low k wafer technology with Cu wire bondingen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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