Publication: Efficiency enhancement of CIGS solar cell by WS2 as window layer through numerical modelling tool
Date
2020
Authors
Sobayel K.
Shahinuzzaman M.
Amin N.
Karim M.R.
Dar M.A.
Gul R.
Alghoul M.A.
Sopian K.
Hasan A.K.M.
Akhtaruzzaman M.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier Ltd
Abstract
Device modelling of copper indium gallium selenide (CIGS) solar cell with tungsten di-suphide (WS2) as a window layer has been carried out in order to achieve higher conversion efficiency. Conversion efficiency for all band-gap energies of CIGS were calculated based on proposed new CIGS/WS2 structure. Numerical modelling tools were used to investigate the effects conduction band offset and interface defect state on the photovoltaic parameters of CIGS/WS2 solar cell. The model predicts the density of defect tolerance in the interface is 1 � 1011 cm3. Based on optimization, the highest efficiency of 26.4% has been achieved for CIGS/WS2 solar cell with Eg(CIGS) = 1.4 eV (Voc = 1.026 V, Jsc = 29.57 mA/cm2 and FF = 86.96%) which is better than that of CIGS (23.4%) solar cell. The simulation further identifies that proposed CIGS/WS2 structure is less temperature sensitive compared to conventional Si solar cell. This research paves the way for WS2 thin film as a potential window layer material for CIGS solar cells. � 2020
Description
Conversion efficiency; Copper compounds; Defects; Efficiency; Energy gap; Gallium compounds; Indium compounds; Interface states; Layered semiconductors; Numerical models; Photovoltaic effects; Solar power generation; Tungsten compounds; Conduction band offset; Density of defects; Efficiency enhancement; Gallium selenides; Interface defect state; Photovoltaic parameters; Potential windows; Temperature sensitive; Thin film solar cells; energy efficiency; fuel cell; gallium; numerical model; photovoltaic system; solar power