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Efficiency enhancement of CIGS solar cell by WS2 as window layer through numerical modelling tool

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dc.citedby49
dc.contributor.authorSobayel K.en_US
dc.contributor.authorShahinuzzaman M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorKarim M.R.en_US
dc.contributor.authorDar M.A.en_US
dc.contributor.authorGul R.en_US
dc.contributor.authorAlghoul M.A.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorHasan A.K.M.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57193799716en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid56820318000en_US
dc.contributor.authorid8586960200en_US
dc.contributor.authorid24331532200en_US
dc.contributor.authorid8626748100en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid57200133780en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T08:07:48Z
dc.date.available2023-05-29T08:07:48Z
dc.date.issued2020
dc.descriptionConversion efficiency; Copper compounds; Defects; Efficiency; Energy gap; Gallium compounds; Indium compounds; Interface states; Layered semiconductors; Numerical models; Photovoltaic effects; Solar power generation; Tungsten compounds; Conduction band offset; Density of defects; Efficiency enhancement; Gallium selenides; Interface defect state; Photovoltaic parameters; Potential windows; Temperature sensitive; Thin film solar cells; energy efficiency; fuel cell; gallium; numerical model; photovoltaic system; solar poweren_US
dc.description.abstractDevice modelling of copper indium gallium selenide (CIGS) solar cell with tungsten di-suphide (WS2) as a window layer has been carried out in order to achieve higher conversion efficiency. Conversion efficiency for all band-gap energies of CIGS were calculated based on proposed new CIGS/WS2 structure. Numerical modelling tools were used to investigate the effects conduction band offset and interface defect state on the photovoltaic parameters of CIGS/WS2 solar cell. The model predicts the density of defect tolerance in the interface is 1 � 1011 cm3. Based on optimization, the highest efficiency of 26.4% has been achieved for CIGS/WS2 solar cell with Eg(CIGS) = 1.4 eV (Voc = 1.026 V, Jsc = 29.57 mA/cm2 and FF = 86.96%) which is better than that of CIGS (23.4%) solar cell. The simulation further identifies that proposed CIGS/WS2 structure is less temperature sensitive compared to conventional Si solar cell. This research paves the way for WS2 thin film as a potential window layer material for CIGS solar cells. � 2020en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.solener.2020.07.007
dc.identifier.epage485
dc.identifier.scopus2-s2.0-85087666837
dc.identifier.spage479
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85087666837&doi=10.1016%2fj.solener.2020.07.007&partnerID=40&md5=000e3fe28317325b6eddffdc76741ed9
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25277
dc.identifier.volume207
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleSolar Energy
dc.titleEfficiency enhancement of CIGS solar cell by WS2 as window layer through numerical modelling toolen_US
dc.typeArticleen_US
dspace.entity.typePublication
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