Publication:
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET

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dc.citedby3
dc.contributor.authorNoor Faizah Z.A.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorid56395444600en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57201289731en_US
dc.date.accessioned2023-05-29T06:11:25Z
dc.date.available2023-05-29T06:11:25Z
dc.date.issued2016
dc.descriptionBallistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gates; Ideal ohmic contacts; Process characterization; Sub-threshold swing(ss); MOSFET devicesen_US
dc.description.abstractThis paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL). � 2016 The Authors, published by EDP Sciences.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo1016
dc.identifier.doi10.1051/matecconf/20167801016
dc.identifier.scopus2-s2.0-84992390128
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84992390128&doi=10.1051%2fmatecconf%2f20167801016&partnerID=40&md5=df815cfef93cec7da76855409d46bb7c
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22636
dc.identifier.volume78
dc.publisherEDP Sciencesen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleMATEC Web of Conferences
dc.titleProcess Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFETen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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