Publication: Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET
Date
2016
Authors
Noor Faizah Z.A.
Ahmad I.
Ker P.J.
Menon P.S.
Journal Title
Journal ISSN
Volume Title
Publisher
EDP Sciences
Abstract
This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL). � 2016 The Authors, published by EDP Sciences.
Description
Ballistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gates; Ideal ohmic contacts; Process characterization; Sub-threshold swing(ss); MOSFET devices