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Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film

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dc.citedby11
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorFerdaous M.T.en_US
dc.contributor.authorSapeli M.M.I.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid55567613100en_US
dc.contributor.authorid57201282111en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T06:52:11Z
dc.date.available2023-05-29T06:52:11Z
dc.date.issued2018
dc.descriptionLayered semiconductors; Molybdenum compounds; Molybdenum plating; Sputtering; Controllable formation; Crystallographic orientations; Czts solar cells; Mo films; MoS2; Packing factor; Sulphurization; Vacuum thermal annealing; Thin filmsen_US
dc.description.abstractIn this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation. � 2018 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.matlet.2018.02.087
dc.identifier.epage177
dc.identifier.scopus2-s2.0-85042423657
dc.identifier.spage174
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85042423657&doi=10.1016%2fj.matlet.2018.02.087&partnerID=40&md5=4e41d0b9f04ca98adeba13431b930828
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23825
dc.identifier.volume219
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleMaterials Letters
dc.titleControllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin filmen_US
dc.typeArticleen_US
dspace.entity.typePublication
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