Publication: Controllable formation of MoS2 via preferred crystallographic orientation modulation of DC-sputtered Mo thin film
Date
2018
Authors
Chelvanathan P.
Shahahmadi S.A.
Ferdaous M.T.
Sapeli M.M.I.
Sopian K.
Amin N.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier B.V.
Abstract
In this letter, we report the effects of preferred crystallographic orientation of Mo films on the formation of MoS2 layer through elemental sulphurization process. Vacuum thermal annealing of as-sputtered Mo films results in noticeable change in preferred crystallographic orientation from (1 1 0) to (2 1 1) plane. Correlation between structural and Raman spectroscopy study indicates that Mo film with predominantly (2 1 1) orientation results in pronounced formation of MoS2 compared to the film with the higher degree of (1 1 0) orientation. Planar packing factor, which depends on crystallographic orientation is proposed to play a crucial role in determining the degree of MoS2 formation. � 2018 Elsevier B.V.
Description
Layered semiconductors; Molybdenum compounds; Molybdenum plating; Sputtering; Controllable formation; Crystallographic orientations; Czts solar cells; Mo films; MoS2; Packing factor; Sulphurization; Vacuum thermal annealing; Thin films