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Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging

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dc.citedby2
dc.contributor.authorKer P.J.en_US
dc.contributor.authorMarshall A.R.J.en_US
dc.contributor.authorTan C.H.en_US
dc.contributor.authorDavid J.P.R.en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid7401645580en_US
dc.contributor.authorid57189468185en_US
dc.contributor.authorid25647614700en_US
dc.date.accessioned2023-05-29T06:11:39Z
dc.date.available2023-05-29T06:11:39Z
dc.date.issued2016
dc.descriptionAvalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivationen_US
dc.description.abstractThe effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging. � 2016 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo7510018
dc.identifier.doi10.1109/ICP.2016.7510018
dc.identifier.scopus2-s2.0-84981736080
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84981736080&doi=10.1109%2fICP.2016.7510018&partnerID=40&md5=4a99f3d36c39853bf96d280df191d5a3
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22687
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.relation.ispartofAll Open Access, Green
dc.sourceScopus
dc.sourcetitle2016 IEEE 6th International Conference on Photonics, ICP 2016
dc.titleSurface passivation of InAs avalanche photodiodes for low-noise infrared imagingen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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