Publication: Surface passivation of InAs avalanche photodiodes for low-noise infrared imaging
Date
2016
Authors
Ker P.J.
Marshall A.R.J.
Tan C.H.
David J.P.R.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
The effect of surface passivation on the etched-mesa InAs diodes was investigated by carrying out the fabrication and passivation of InAs diodes. Extensive and detailed current-voltage characterization was done to determine the most suitable type of insulating material for the surface passivation. SU-8, silicon nitride, silicon dioxide and B-staged Bisbenzocyclobutene were used for the purpose of minimizing the conductivity of the etched mesa surface of InAs diodes. The forward- and reverse-biased characteristics of InAs diodes were measured at room temperature and 77 K in order to carefully investigate the effect of different surface passivation schemes. The results of this work categorically indicated that SU-8 is the most effective surface passivation material for InAs diodes, whereas silicon nitride and silicon dioxide have contributed to an even higher surface leakage current. Furthermore, SU-8 passivated InAs diodes were more sustainable to high bias voltages and its robustness increases the opportunity of its utilization for practical applications such as infrared imaging. � 2016 IEEE.
Description
Avalanche photodiodes; Characterization; Diodes; Infrared imaging; Leakage currents; Nitrides; Photodiodes; Photonics; Silica; Silicon nitride; Thermography (imaging); B-staged bisbenzocyclobutene; Current-voltage characterization; InAs; Low noise; Surface leakage currents; Surface passivation; Passivation