Publication:
Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D

dc.citedby65
dc.contributor.authorChowdhury M.S.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorTechato K.en_US
dc.contributor.authorNuthammachot N.en_US
dc.contributor.authorChowdhury T.en_US
dc.contributor.authorSuklueng M.en_US
dc.contributor.authorid57224213317en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid25321184300en_US
dc.contributor.authorid57204889352en_US
dc.contributor.authorid57221420455en_US
dc.contributor.authorid55896993000en_US
dc.date.accessioned2023-05-29T08:11:01Z
dc.date.available2023-05-29T08:11:01Z
dc.date.issued2020
dc.description.abstractIn this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm?3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance. � 2019 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.ArtNo102839
dc.identifier.doi10.1016/j.rinp.2019.102839
dc.identifier.scopus2-s2.0-85076824545
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85076824545&doi=10.1016%2fj.rinp.2019.102839&partnerID=40&md5=5a623cf395ef8c2efdf44a51cf30afb3
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25567
dc.identifier.volume16
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleResults in Physics
dc.titleEffect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1Den_US
dc.typeNoteen_US
dspace.entity.typePublication
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