Publication: Effect of deep-level defect density of the absorber layer and n/i interface in perovskite solar cells by SCAPS-1D
Date
2020
Authors
Chowdhury M.S.
Shahahmadi S.A.
Chelvanathan P.
Tiong S.K.
Amin N.
Techato K.
Nuthammachot N.
Chowdhury T.
Suklueng M.
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier B.V.
Abstract
In this paper, Solar Cell Capacitance Simulator-1D (SCAPS-1D) was used to study the absorber layer defect density and n/i interface of perovskite solar cells versus various cell thickness values. The planar p-i-n structure was defined as PEDOT:PSS/Perovskite/CdS, and its performance was simulated. Power conversion efficiency >25% can be achieved at <1014 cm?3 defect density and >400 nm thickness of absorber layer, respectively. The study assumed 0.6 eV Gaussian defect energy level below the perovskite's conduction band with a characteristic energy of 0.1 eV. These conditions resulted in an identical outcome on the n/i interface. These results show constraints on numerical simulation for correlation between defect mechanism and performance. � 2019 The Authors