Publication: Optimization of baseline parameters and numerical simulation for Cu(In, Ga)Se2 solar cell
Date
2018
Authors
Za'Abar F.
Zuhdi A.W.M.
Bahrudin M.S.
Abdullah S.F.
Harif M.N.
Hasani A.H.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
For the purpose of designing a highly efficient Cu(In, Ga)Se2 (CIGS) solar cell, an understanding of the structural, optical and electronic properties of each constituent layers in the heterojunction cell is very crucial. Important parameters such as thickness, doping concentration, electron affinity and band gap energy are identified to govern the electrical characterization of the cell. In this paper, an extensive study on the effects of these parameters on the short circuit current density (Jsc) and open circuit voltage (Voc) known as J-V characteristics is performed. Optimized values of each parameter obtained from different numerical simulations are summarized and presented. An optimal CIGS solar cell model is later identified and simulated using Silvaco ATLAS software. Performance analysis is carried out on the completed cell under standard irradiance with air mass 1.5 (AM1.5) spectrums. This proposed model provides simulated conversion efficiency of 23.58% and fill factor (FF) of 77.89% which is in agreement with experimental efficiencies found in literature. � 2018 IEEE.
Description
Computer simulation; Computer software; Conversion efficiency; Electric network analysis; Electron affinity; Electronic properties; Energy gap; Heterojunctions; Numerical models; Open circuit voltage; Semiconductor doping; ATLAS software; Baseline data; CIGS solar cells; Electrical characterization; Heterojunction cells; Optical and electronic properties; Parameters optimization; Performance analysis; Solar cells