Publication:
High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

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dc.citedby4
dc.contributor.authorMah S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorNoor Faizah Z.A.en_US
dc.contributor.authorid57191706660en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid56395444600en_US
dc.date.accessioned2023-05-29T06:56:48Z
dc.date.available2023-05-29T06:56:48Z
dc.date.issued2018
dc.description.abstractHigh-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness. � 2018 Universiti Teknikal Malaysia Melaka. All rights reserved.en_US
dc.description.natureFinalen_US
dc.identifier.epage5
dc.identifier.issue2-Jun
dc.identifier.scopus2-s2.0-85049382746
dc.identifier.spage1
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85049382746&partnerID=40&md5=499445c6905608a5ac9d53990e5af555
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24198
dc.identifier.volume10
dc.publisherUniversiti Teknikal Malaysia Melakaen_US
dc.sourceScopus
dc.sourcetitleJournal of Telecommunication, Electronic and Computer Engineering
dc.titleHigh-k Dielectric Thickness and Halo Implant on Threshold Voltage Controlen_US
dc.typeArticleen_US
dspace.entity.typePublication
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