Publication: High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control
Date
2018
Authors
Mah S.K.
Ahmad I.
Ker P.J.
Noor Faizah Z.A.
Journal Title
Journal ISSN
Volume Title
Publisher
Universiti Teknikal Malaysia Melaka
Abstract
High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive current (ION) and low IOFF gives a high on-off current ratio (ION/IOFF), which leads to a faster switching speed for the N-type Metal Oxide Semiconductor Field Effect Transistor (NMOS). In order to achieve the best ION/IOFF ratio for a predetermined range of VTH, halo implant was used to adjust the threshold voltage. The finding shows that optimum VTH and ION/IOFF ratio can be achieved by selecting the most suitable halo implant dose in a virtually fabricated 14nm gate-length La2O3-based NMOS device with varying high-k dielectric oxide thickness. � 2018 Universiti Teknikal Malaysia Melaka. All rights reserved.