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Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software

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dc.citedby2
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorMahmood Zuhdi A.W.en_US
dc.contributor.authorZa'Abar F.en_US
dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorHasani A.H.en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid56589966300en_US
dc.contributor.authorid57204593023en_US
dc.contributor.authorid55603412800en_US
dc.contributor.authorid57204586055en_US
dc.date.accessioned2023-05-29T06:50:50Z
dc.date.available2023-05-29T06:50:50Z
dc.date.issued2018
dc.descriptionC (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coefficient; Temperatureen_US
dc.description.abstractThe Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25�C to 50�C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change. � 2018 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8481333
dc.identifier.doi10.1109/SMELEC.2018.8481333
dc.identifier.epage204
dc.identifier.scopus2-s2.0-85056261541
dc.identifier.spage201
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85056261541&doi=10.1109%2fSMELEC.2018.8481333&partnerID=40&md5=dcfd5dc861af78f3edecde65cb40bd94
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23661
dc.identifier.volume2018-August
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
dc.titleSimulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D softwareen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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