Publication: Simulation analysis on CIGS solar cell on different absorber layer thickness subject to temperature change using SCAPS 1-D software
Date
2018
Authors
Harif M.N.
Abdullah S.F.
Mahmood Zuhdi A.W.
Za'Abar F.
Bahrudin M.S.
Hasani A.H.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers Inc.
Abstract
The Copper Indium Gallium Selenide (CIGS) solar cell due to temperature change has been studied and the analysis was simulated using SCAPS 1-D software with the operating temperature varied from 25�C to 50�C. There are 3 parameters of thickness of CIGS absorber layer had been taken into account. The output characteristics were analyzed through a graphical method. The results showed a decreasing performance on the temperature change with respect to the efficiency, fill factor (FF) and open circuit voltage (Voc) except for short circuit current density (Jsc). The average degradation of efficieny, fill factor and open circuit voltage with respect to temperature are 7.87%, 1.61 % and 6.81 % respectively while short current density increase 0.50%. It can also be suggested that there are significant direct correlations between band gap energy and temperature change. � 2018 IEEE.
Description
C (programming language); Computer software; Copper compounds; Efficiency; Energy gap; Gallium compounds; Indium compounds; Layered semiconductors; Open circuit voltage; Short circuit currents; Solar absorbers; Solar cells; Band gap energy; CIGS solar cells; Fill factor; SCAPS 1-D; Temperature coefficient; Temperature