Publication:
Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell

dc.citedby1
dc.contributor.authorAbdullah H.en_US
dc.contributor.authorMahalingam S.en_US
dc.contributor.authorAbu Bakar N.A.en_US
dc.contributor.authorManap A.en_US
dc.contributor.authorOthman M.H.D.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid26025061200en_US
dc.contributor.authorid55434075500en_US
dc.contributor.authorid57223328289en_US
dc.contributor.authorid57200642155en_US
dc.contributor.authorid57217148784en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:37:27Z
dc.date.available2023-05-29T09:37:27Z
dc.date.issued2022
dc.descriptionElectron transport properties; Hematite; II-VI semiconductors; Open circuit voltage; Solid electrolytes; Sols; Zinc oxide; Electron recombinations; Electron transport; Excited electrons; Field emission electron microscopy; Gel electrolyte; Optimum concentration; Polyacrylonitrile (PAN); Porous structures; Dye-sensitized solar cellsen_US
dc.description.abstractThis work aims to study the influence of Fe2O3 in ZnO/GO-based DSSC incorporating PAN-based gel electrolyte. ZnO�Fe2O3/GO thin films and gel electrolyte were prepared using the sol�gel technique via spin-coating and polymerization of polyacrylonitrile (PAN) methods, respectively. The insertion of Fe2O3 in ZnO/GO improved the open-circuit voltage and fill factor significantly. However, large amount of Fe2O3 (0.3%) inhibited the electron transport with high electron recombination rate (keff = 3044.62�s?1). The main reason for the low efficiency in ZnO�Fe2O3(0.3%)/GO is due to the energy band misalignment with the failure of the excited electron from the LUMO of dye into the conduction band of ZnO�Fe2O3(0.3%)/GO. The study found that the optimum concentration of Fe2O3 is 0.2% for an efficient DSSC. ZnO�Fe2O3(0.2%)/GO-based DSSC exhibited slow electron recombination of 0.751�s?1. Moreover, the fine nanoparticles of ZnO�Fe2O3(0.2%)/GO observed through field emission electron microscopy show a more porous structure that improved the short-circuit current density in DSSC. � 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1007/s00289-021-03708-8
dc.identifier.epage4301
dc.identifier.issue6
dc.identifier.scopus2-s2.0-85105548981
dc.identifier.spage4287
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85105548981&doi=10.1007%2fs00289-021-03708-8&partnerID=40&md5=98ae8cb15f9bb3db75f23be609fad62e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26876
dc.identifier.volume79
dc.publisherSpringer Science and Business Media Deutschland GmbHen_US
dc.sourceScopus
dc.sourcetitlePolymer Bulletin
dc.titleInfluence of Fe2O3 in ZnO/GO-based dye-sensitized solar cellen_US
dc.typeArticleen_US
dspace.entity.typePublication
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