Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell

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Abdullah H.
Mahalingam S.
Abu Bakar N.A.
Manap A.
Othman M.H.D.
Akhtaruzzaman M.
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Springer Science and Business Media Deutschland GmbH
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This work aims to study the influence of Fe2O3 in ZnO/GO-based DSSC incorporating PAN-based gel electrolyte. ZnO�Fe2O3/GO thin films and gel electrolyte were prepared using the sol�gel technique via spin-coating and polymerization of polyacrylonitrile (PAN) methods, respectively. The insertion of Fe2O3 in ZnO/GO improved the open-circuit voltage and fill factor significantly. However, large amount of Fe2O3 (0.3%) inhibited the electron transport with high electron recombination rate (keff = 3044.62�s?1). The main reason for the low efficiency in ZnO�Fe2O3(0.3%)/GO is due to the energy band misalignment with the failure of the excited electron from the LUMO of dye into the conduction band of ZnO�Fe2O3(0.3%)/GO. The study found that the optimum concentration of Fe2O3 is 0.2% for an efficient DSSC. ZnO�Fe2O3(0.2%)/GO-based DSSC exhibited slow electron recombination of 0.751�s?1. Moreover, the fine nanoparticles of ZnO�Fe2O3(0.2%)/GO observed through field emission electron microscopy show a more porous structure that improved the short-circuit current density in DSSC. � 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH Germany, part of Springer Nature.
Electron transport properties; Hematite; II-VI semiconductors; Open circuit voltage; Solid electrolytes; Sols; Zinc oxide; Electron recombinations; Electron transport; Excited electrons; Field emission electron microscopy; Gel electrolyte; Optimum concentration; Polyacrylonitrile (PAN); Porous structures; Dye-sensitized solar cells