Publication:
High performance silicon lateral PIN photodiode

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dc.citedby6
dc.contributor.authorTasirin S.K.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.date.accessioned2023-12-29T07:45:22Z
dc.date.available2023-12-29T07:45:22Z
dc.date.issued2013
dc.description.abstractStart Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. � Published under licence by IOP Publishing Ltd.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo12032
dc.identifier.doi10.1088/1755-1315/16/1/012032
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84881093819
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84881093819&doi=10.1088%2f1755-1315%2f16%2f1%2f012032&partnerID=40&md5=f99c8f5a8c42987228547acb96b4ff82
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30190
dc.identifier.volume16
dc.publisherInstitute of Physics Publishingen_US
dc.relation.ispartofAll Open Access; Bronze Open Access
dc.sourceScopus
dc.sourcetitleIOP Conference Series: Earth and Environmental Science
dc.subjectData communication systems
dc.subjectFrequency response
dc.subjectDesign parameters
dc.subjectHigh-speed optoelectronics
dc.subjectLateral p-i-n photodiode
dc.subjectLateral PIN photodiodes
dc.subjectLayer thickness
dc.subjectOptical power
dc.subjectPhotoabsorptions
dc.subjectWavelength ranges
dc.subjectcommunication network
dc.subjectconference proceeding
dc.subjectdata set
dc.subjectdesign
dc.subjectfiber optics
dc.subjectquantum mechanics
dc.subjectsilicon
dc.subjectPhotodiodes
dc.titleHigh performance silicon lateral PIN photodiodeen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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