Publication: High performance silicon lateral PIN photodiode
Date
2013
Authors
Tasirin S.K.
Menon P.S.
Ahmad I.
Abdullah S.F.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics Publishing
Abstract
Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. � Published under licence by IOP Publishing Ltd.
Description
Keywords
Data communication systems , Frequency response , Design parameters , High-speed optoelectronics , Lateral p-i-n photodiode , Lateral PIN photodiodes , Layer thickness , Optical power , Photoabsorptions , Wavelength ranges , communication network , conference proceeding , data set , design , fiber optics , quantum mechanics , silicon , Photodiodes