Publication: High performance silicon lateral PIN photodiode
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Date
2013
Authors
Tasirin S.K.
Menon P.S.
Ahmad I.
Abdullah S.F.
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Physics Publishing
Abstract
Start Photodetectors with high responsivity in Si-related processes are required for high speed optoelectronic applications such as fiber optic data communication systems. In this paper, the performance of a virtual lateral PIN photodiode with intensity response in the 200-1000 nm wavelength range was demonstrated. The results obtained for responsivity, total quantum efficiency and frequency response were 0.62 A/W and 13.1 GHz respectively for design parameters of intrinsic region length of 6 ?m, photoabsorption layer thickness of 50 ?m, incident optical power of 1 mW/cm2 and bias voltage of 3 V. As a conclusion, the decrease in device size enabled the realization of a high performance lateral p-i-n photodiode. � Published under licence by IOP Publishing Ltd.
Description
Keywords
Data communication systems , Frequency response , Design parameters , High-speed optoelectronics , Lateral p-i-n photodiode , Lateral PIN photodiodes , Layer thickness , Optical power , Photoabsorptions , Wavelength ranges , communication network , conference proceeding , data set , design , fiber optics , quantum mechanics , silicon , Photodiodes