College of Engineering (COE)

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Now showing 1 - 8 of 8
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    The effect of sintering temperature on the electrical and magneto-transport properties of magnetoresistive NSMO
    (2015)
    Ahmad Razikin Badroll Hisham
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    The effects of varying sintering temperature of 1150C, 1250C & 1350C on the electrical and magneto-transport properties of magnetoresistive Nd0.68Sr0.32MnO3 have been investigated. The samples were fabricated using Solid State Reaction method. The sample sintered at 1350C have the smallest grain size which is 27.5. As sintering temperature get higher almost all the grains become smaller. Besides, the sample sintered at 1350C has the largest MR value which is 1.2% and the largest T value of 118.36E10K. As sintering temperature get higher, the Tim get larger. The largest Tim value recorded in this research was 234K.
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    Thermal conductivity and dielectric of solid glass microsphere and epoxy composite
    (2020-02)
    Ahmad Amirun Aqil Ahmad Padhli
    This thesis reports describes the thermal and dielectric of solid glass microsphere and epoxy composite. The main objectives of this thesis are to fabricate epoxy composite filled with Solid Glass Microsphere (SGM) composite with different ratio, measure the thermal conductivity and the dielectric of different ratio epoxy filled with Solid Glass Microsphere (SGM) composite and to optimize the ratio for thermal conductivity and dielectric of epoxy and Solid Glass Microsphere (SGM) composite. The both material will be mix together by following the ratio given in order to get a composite material with specific standard being follow by the testing machine. The ratio is starting from 100%, 90%, 80%, 70%, 60%, 50% and 40% (Epoxies) and the remaining is Solid Glass Microsphere (SGM). The composite will be put under thermal conductivity testing and AC breakdown testing (Dielectric) to observe the ratio that is more suitable and sustain. This testing is being conduct at laboratory and the lab instructor will do the testing because of the limited testing machine.
      37  47
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    Simulation of lattice mismatched indium gallium arsenide for thermophotovoltaic
    (2020-02)
    Shuangela Joy Sebastian
    The principle of operation of a thermophotovoltaic (TPV) cell is the same as the one of standard photovoltaic (PV) devices. Photons are absorbed within the semiconductor and charge is generated. The excess positive and negative charges are separated at the p-n junction and then extracted from the cell as electric current. The main difference lies in the irradiance spectra used for the operation of TPV and PV devices. GaxIn1-xAs is an attractive choice for this application as its bandgap can be engineered to match the optimal range for TPV operation by adjusting the indium to gallium composition ratio, GaxIn1-xAs. In this thesis, InGaAs with a x composition of In0.68Ga0.38As and InAsP with a x composition of InAs0.34P0.66 were used with a bandgap of 0.6eV and 0.99eV respectively. The TPV cell is constructed and simulated in SILVACO software to obtain the performance parameters. This simulation is run under blackbody temperature of 1400K. A range of temperature was simulated to determine the best temperature. 1400K contributes the best result in terms of cell’s efficiency. The cell is then validated and optimized by varying the thickness and doping concentration of Emitter and Base region of the cell. The discussion for the optimized InGaAs TPV Cell is expressed and illustrated in the respective chapters.
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