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Absorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospects

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dc.contributor.authorLee H.J.en_US
dc.contributor.authorGamel M.M.A.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorJamaludin M.Z.en_US
dc.contributor.authorWong Y.H.en_US
dc.contributor.authorDavid J.P.R.en_US
dc.contributor.authorid57190622221en_US
dc.contributor.authorid57215306835en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57216839721en_US
dc.contributor.authorid36605495300en_US
dc.contributor.authorid25647614700en_US
dc.date.accessioned2023-05-29T09:36:14Z
dc.date.available2023-05-29T09:36:14Z
dc.date.issued2022
dc.descriptionCrystal structure; Energy gap; Genetic algorithms; III-V semiconductors; Optical properties; Solar power generation; Structural design; Absorption coefficients; Bulk growth; Bulk III-V semiconductors; Bulk semiconductors; Comparatives studies; Future prospects; Property; Quaternary; Semiconductor crystals; Ternary; Infrared devicesen_US
dc.description.abstractOver the last few decades, research works have focused on elucidating the optical properties of semiconductor materials. Despite remarkable progress in the measurement and calculation of the absorption coefficient for semiconductor materials, there is a lack of comprehensive review on the comparative study of absorption coefficient properties for different types of bulk semiconductor materials and their methods for calculating the absorption coefficient. Hence, this paper summarizes the fundamentals of the various methods used to determine the absorption coefficient properties of bulk growth semiconductor crystals, and discusses their advantages and disadvantages. Furthermore, this review provides comprehensive results from recent studies and findings on the absorption properties of near- to mid-infrared (wavelengths from 800 to 7300�nm) group III-V semiconductor materials. In addition, the absorption coefficient of the conventional group IV semiconductors (silicon and Ge) were included for performance comparison. Critical analysis was done for the reviewed materials concerning their material properties, such as band gap structure, crystal quality, and the structural design of the device. The related studies on the methods to determine the absorption coefficients of semiconductors and to improve the likelihood of absorption performance were well highlighted. This review also provides an in-depth discussion on the knowledge of absorption coefficient based on a wide range of semiconductor materials and their potential for sensors, photodetectors, solar and photovoltaic application in the near to mid infrared region. Lastly, the future prospects for research on absorption coefficients are discussed and the advancement in the determination of absorption coefficients for new ternary and quaternary materials is proposed using artificial intelligence such as neural networks and genetic algorithm. � 2022, The Minerals, Metals & Materials Society.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1007/s11664-022-09846-7
dc.identifier.epage6107
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85136657644
dc.identifier.spage6082
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85136657644&doi=10.1007%2fs11664-022-09846-7&partnerID=40&md5=f1110a5b7e7b8a2227ab4701e307b14c
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26698
dc.identifier.volume51
dc.publisherSpringeren_US
dc.relation.ispartofAll Open Access, Bronze
dc.sourceScopus
dc.sourcetitleJournal of Electronic Materials
dc.titleAbsorption Coefficient of Bulk III-V Semiconductor Materials: A Review on Methods, Properties and Future Prospectsen_US
dc.typeReviewen_US
dspace.entity.typePublication
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