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Responsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal array

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dc.citedby2
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorTasirin S.K.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorApte P.R.en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid55602329100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid55725529100en_US
dc.date.accessioned2023-12-28T04:13:00Z
dc.date.available2023-12-28T04:13:00Z
dc.date.issued2013
dc.description.abstractSilicon-on-insulator (SOI)-based lateral PIN photodiodes using SiGe/Si multilayer quantum wells (MQW) are suitable for applications in the near-infrared range both for sensing and optical fiber communication application. The objective of this paper is to optimize the process parameters for such a device using Taguchi's L27 orthogonal array. Five device process parameters and two device noise factors were identified to make the virtual device design insensitive to variation in the selected fabrication parameters. The results obtained for responsivity after the optimization approach was 0.33 A/W for the optimized device with intrinsic region length of 6 ?m, photo-absorption layer thickness of 0.505 ?m, incident optical power of 0.5 mW/cm2, bias voltage of 3.5 V and SOI layer thickness of 0.5 ?m. The percentage of improvement for the device's responsivity is 27% as compared to the previous work. � 2013 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6706523
dc.identifier.doi10.1109/RSM.2013.6706523
dc.identifier.epage257
dc.identifier.scopus2-s2.0-84893532139
dc.identifier.spage254
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84893532139&doi=10.1109%2fRSM.2013.6706523&partnerID=40&md5=d156db776d826b995baed659e5e3d50d
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29423
dc.pagecount3
dc.sourceScopus
dc.sourcetitleProceedings - RSM 2013: 2013 IEEE Regional Symposium on Micro and Nano Electronics
dc.subjectL<sub>27</sub> orthogonal array
dc.subjectphotodiode
dc.subjectquantum dot
dc.subjectSiGe/Si
dc.subjectSOI
dc.subjectTaguchi method
dc.subjectPhotodiodes
dc.subjectSemiconductor quantum wells
dc.subjectTaguchi methods
dc.subjectFabrication parameters
dc.subjectLateral PIN photodiodes
dc.subjectOptimization approach
dc.subjectOrthogonal array
dc.subjectquantum dot
dc.subjectSiGe/Si
dc.subjectSilicon-on-insulators
dc.subjectSOI
dc.subjectOptimization
dc.titleResponsivity optimization of a MQW SOI-based lateral PIN photodiode using Taguchi's L27 orthogonal arrayen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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