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Effects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition method

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dc.citedby1
dc.contributor.authorArsad A.Z.en_US
dc.contributor.authorArzaee N.A.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorRahman M.N.A.en_US
dc.contributor.authorNoh M.F.M.en_US
dc.contributor.authorBahruddin M.S.en_US
dc.contributor.authorZa'abar F.I.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorIbrahim N.B.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorid56926685200en_US
dc.contributor.authorid57204034965en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid57102327000en_US
dc.contributor.authorid57200419635en_US
dc.contributor.authorid58917193100en_US
dc.contributor.authorid56374530600en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid7102687930en_US
dc.contributor.authorid56589966300en_US
dc.date.accessioned2025-03-03T07:43:43Z
dc.date.available2025-03-03T07:43:43Z
dc.date.issued2024
dc.description.abstractZinc sulfide thin films have been prepared through the effective-cost chemical bath deposition (CBD), utilizing various post-deposition treatments (PDT). PDT parameters like ammonia concentration, dipping time, and ultrasonic cleaning (UC) were investigated. The study found that ZnS thin film surface morphologies differ before and after PDT. The untreated film has an impurity phase with distinct morphology, low transmittance, carrier concentrations, and mobility values. PDT films tailored to non-crystalline phases resulted in lower thickness, improved transmittance, and enhanced carrier concentrations and mobility values compared to untreated film. XPS findings demonstrate that various PDT changes in the film composition eliminate sulfate and Zn(OH)2 and increase ZnO bonds. Simultaneous NH4OH and UC lead Zn?O bond peaks to dominate and band gap deterioration compared to untreated ZnS thin film. The ZnS thin films treated with 20% NH4OH without UC exhibited excellent properties, including structure prominent of Zn?S and Zn?O bond peaks, 106 nm thickness growth, 95% average transmittance, 3.70 eV band gap, 3.67 ? 1011 cm?3 carrier concentration, 3.95 ? 102 cm2V?1S?1 mobility, and 4.30 ? 104 �cm resistivity. These values can be ideal for implementing buffer layers on copper indium gallium selenide (CIGS) solar cells. The PDT approach can improve the properties of ZnS thin films, which is crucial to reducing costs in solar cell production. ? 2024en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.ceramint.2024.02.358
dc.identifier.epage18707
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85186548893
dc.identifier.spage18697
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85186548893&doi=10.1016%2fj.ceramint.2024.02.358&partnerID=40&md5=7a8a9f8f0e54f0d56b31403e805b87b2
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36660
dc.identifier.volume50
dc.pagecount10
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleCeramics International
dc.subjectAmmonia
dc.subjectBuffer layers
dc.subjectCarrier concentration
dc.subjectCarrier mobility
dc.subjectChelation
dc.subjectCopper compounds
dc.subjectDeposition
dc.subjectDeterioration
dc.subjectEnergy gap
dc.subjectFilm preparation
dc.subjectII-VI semiconductors
dc.subjectLayered semiconductors
dc.subjectMorphology
dc.subjectSolar cells
dc.subjectSols
dc.subjectThin films
dc.subjectZinc oxide
dc.subjectZinc sulfide
dc.subjectChemical-bath deposition
dc.subjectConcentration values
dc.subjectMobility value
dc.subjectNon-crystalline structure
dc.subjectPost-deposition treatment condition
dc.subjectPostdeposition treatments
dc.subjectProperty
dc.subjectTreatment conditions
dc.subjectZinc sulfide thin films
dc.subjectZnS thin films
dc.subjectOptical properties
dc.titleEffects of post-deposition treatment on zinc sulfide thin films prepared by an effective-cost chemical bath deposition methoden_US
dc.typeArticleen_US
dspace.entity.typePublication
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