Publication:
Influence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOS

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dc.citedby1
dc.contributor.authorAtan N.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorMajlis B.Y.en_US
dc.contributor.authorAzle M.F.en_US
dc.contributor.authorid26422792900en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603071546en_US
dc.contributor.authorid57191667430en_US
dc.date.accessioned2023-05-29T06:11:26Z
dc.date.available2023-05-29T06:11:26Z
dc.date.issued2016
dc.descriptionGate dielectrics; Hafnium oxides; Ion implantation; Ions; Manufacture; Taguchi methods; Threshold voltage; Compensation implantations; Fabrication process; Halo implantation; Ion implantation methods; Optimization of process parameters; Process parameters; Short-channel effect; Taguchi orthogonal arrays; Signal to noise ratioen_US
dc.description.abstractManufacturing a 18-nm transistor requires a variety of parameters, materials, temperatures, and methods. In this research, HfO2 was used as the gate dielectric ad TiO2 was used as the gate material. The transistor HfO2/TiSi2 18-nm PMOS was invented using SILVACO TCAD. Ion implantation was adopted in the fabrication process for the method's practicality and ability to be used to suppress short channel effects. The study involved ion implantation methods: compensation implantation, halo implantation energy, halo tilt, and source-drain implantation. Taguchi method is the best optimization process for a threshold voltage of HfO2/TiSi2 18-nm PMOS. In this case, the method adopted was Taguchi orthogonal array L9. The process parameters (ion implantations) and noise factors were evaluated by examining the Taguchi's signal-to-noise ratio (SNR) and nominal-the-best for the threshold voltage (VTH). After optimization, the result showed that the VTH value of the 18-nm PMOS device was-0.291339. � 2016 The Authors, published by EDP Sciences.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo1019
dc.identifier.doi10.1051/matecconf/20167801019
dc.identifier.scopus2-s2.0-84992365484
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84992365484&doi=10.1051%2fmatecconf%2f20167801019&partnerID=40&md5=0921afae995e345babe3831b1eb0b011
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22637
dc.identifier.volume78
dc.publisherEDP Sciencesen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitleMATEC Web of Conferences
dc.titleInfluence of Optimization of Process Parameters on Threshold Voltage for Development of HfO2/TiSi2 18 nm PMOSen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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