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Analysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array method

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dc.citedby10
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorMohd Zain A.S.en_US
dc.contributor.authorIdris N.M.en_US
dc.contributor.authorMat Yamin A.K.en_US
dc.contributor.authorAbdul Hamid A.M.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid55925762500en_US
dc.contributor.authorid57218121930en_US
dc.contributor.authorid55808106600en_US
dc.contributor.authorid7103120115en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid57201289731en_US
dc.date.accessioned2023-05-16T02:46:04Z
dc.date.available2023-05-16T02:46:04Z
dc.date.issued2014
dc.description.abstractIn this research, orthogonal array of L27 in Taguchi Method was used to optimize the process parameters (control factors) variation in 45nm n-channel device with considering the interaction effect. The signal-to-noise (S/N) ratio and analysis of variance (ANOVA) are employed to study the performance characteristics of the device. There are only five process parameters (control factors) were varied for 3 levels to performed 27 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of Vth for every row of experiment. In this study, nominal-the-best characteristic was used in an effort to minimize the variance of Vth. The results show that the Vth values have least variance and percent different from the target value (0.287V) for this device is 1.42% (0.293V). This value is closer with International Technology Roadmap for Semiconductor (ITRS) prediction. © (2014) Trans Tech Publications, Switzerland.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.4028/www.scientific.net/AMR.903.297
dc.identifier.epage302
dc.identifier.scopus2-s2.0-84896876859
dc.identifier.spage297
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84896876859&doi=10.4028%2fwww.scientific.net%2fAMR.903.297&partnerID=40&md5=8641f7d4e0221cefe5423e7bbdf2e7ff
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/21920
dc.identifier.volume903
dc.sourceScopus
dc.sourcetitleAdvanced Materials Research
dc.titleAnalysis of threshold voltage variance in 45nm n-channel device using L27 orthogonal array methoden_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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