Publication:
Effect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiode

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dc.citedby3
dc.contributor.authorKhamis M.A.en_US
dc.contributor.authorRashid W.E.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorLau K.Y.en_US
dc.contributor.authorid57204588662en_US
dc.contributor.authorid57204586520en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57214454981en_US
dc.date.accessioned2023-05-29T06:55:01Z
dc.date.available2023-05-29T06:55:01Z
dc.date.issued2018
dc.description.abstractThe separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (ADPs) are widely used in long distance, high bit rate optical communication system due to their high performance and response to optical fiber wavelength spectrum. In this work, the effect of multiplication layer width (MLW) and absorption layer width (ALW) on APD performance is studied and investigated. Silvaco TCAD software is used as simulation tools to simulate a precise model of InGaAs/InP APD and analyze its, performance under an illuminated condition. As such, three different ALW with various MLW has been simulated while the structure values and material parameters are kept constant. It was found that in the APD with smaller MLW, the distance between the punch-through voltage and the breakdown voltage can be maximized. Therefore, the operation region of APD will be extended. In addition, the multiplication gain is obtained from the photocurrent and primary current by taking the APD collection efficiency effect under the consideration. � 2018 Authors.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.14419/ijet.v7i4.35.22909
dc.identifier.epage563
dc.identifier.issue4
dc.identifier.scopus2-s2.0-85059231970
dc.identifier.spage559
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85059231970&doi=10.14419%2fijet.v7i4.35.22909&partnerID=40&md5=39c57ff91871b205f469719d9fe5a309
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24068
dc.identifier.volume7
dc.publisherScience Publishing Corporation Incen_US
dc.relation.ispartofAll Open Access, Bronze, Green
dc.sourceScopus
dc.sourcetitleInternational Journal of Engineering and Technology(UAE)
dc.titleEffect of multiplication and absorption layers width on avalanche multiplication gain in InGaAs/InP avalanche photodiodeen_US
dc.typeArticleen_US
dspace.entity.typePublication
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