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Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length

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dc.citedby2
dc.contributor.authorAbidin N.F.Z.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorKer P.J.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorid36994666100en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid37461740800en_US
dc.contributor.authorid57201289731en_US
dc.date.accessioned2023-05-29T06:38:10Z
dc.date.available2023-05-29T06:38:10Z
dc.date.issued2017
dc.descriptionbenchmarking; computer simulation; design; dielectric property; electronic equipment; optimization; performance assessment; thresholden_US
dc.description.abstractA planar Graphene Field-Effect Transistor GFET performance with 60 nm gate length was evaluated in discovering new material to meet the relentless demand for higher performance-power saving features. The ATHENA and ATLAS modules of SILVACO TCAD simulation tool was employed to virtually design and assess the electrical performance of GFET. The developed model was benchmarked with the established results obtained from the DESSIS simulator model by using the same graphene channel's parameters and simulated at fixed threshold voltage of 0.4V. The GFET was also analyzed and ranked its performance for four different gate oxides which includes HfO2, Al2O3, TiO2, and Ta2O5. Compared to the benchmarked device, our GFET shows a competitive performance although it possesses a lower drive current (ION). However, the leakage current (IOFF), subthreshold swing (SS) and the device's switching capability (ION/IOFF) are more superior than those of the benchmarked device, with an improvement of 99%, 48.3% and 99.36%, respectively. The with different gate dielectrics were also proven to possess a lower IOFF, competitive ION, smaller SS and better switching capability compared to the established DESSISS model. The graphene parameters in this experiment can be utilized for further optimization of GFET with smaller gate lengths.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.17576/jsm-2017-4607-11
dc.identifier.epage1095
dc.identifier.issue7
dc.identifier.scopus2-s2.0-85029900179
dc.identifier.spage1089
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85029900179&doi=10.17576%2fjsm-2017-4607-11&partnerID=40&md5=7fc525b0b84cca3e098e7adb371bba09
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23171
dc.identifier.volume46
dc.publisherPenerbit Universiti Kebangsaan Malaysiaen_US
dc.relation.ispartofAll Open Access, Bronze
dc.sourceScopus
dc.sourcetitleSains Malaysiana
dc.titlePerformance characterization of schottky tunneling graphene field effect transistor at 60 nm gate lengthen_US
dc.typeArticleen_US
dspace.entity.typePublication
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