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Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

dc.citedby15
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorZaharim A.en_US
dc.contributor.authorHashim U.en_US
dc.contributor.authorApte P.R.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603573875en_US
dc.contributor.authorid15119466900en_US
dc.contributor.authorid22633937800en_US
dc.contributor.authorid55725529100en_US
dc.date.accessioned2023-12-28T07:05:43Z
dc.date.available2023-12-28T07:05:43Z
dc.date.issued2011
dc.description.abstractIn this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance characteristics of a device. In this paper, eleven process parameters (control factors) were varied for 2 levels to perform 12 experiments. Whereas, the two noise factors were varied for 2 levels to get four readings of VTH for every row of experiment. VTH results were used as the evaluation variable. This work was done using technology computer-aided design (TCAD) simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, compensation implantation energy was identified as one of the process parameters that have the strongest effect on the response characteristics. While the halo implantation dosage was identified as an adjustment factor to get the nominal values of threshold voltage for NMOS device equal to 0.176 V. � 2011 Academic Journals.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.5897/IJPS11.401
dc.identifier.epage7034
dc.identifier.issue30
dc.identifier.scopus2-s2.0-82755183478
dc.identifier.spage7026
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-82755183478&doi=10.5897%2fIJPS11.401&partnerID=40&md5=a56bc4c825e83ebb9a1af0c5efe7c4f4
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29585
dc.identifier.volume6
dc.pagecount8
dc.sourceScopus
dc.sourcetitleInternational Journal of Physical Sciences
dc.subjectAnalysis of variance
dc.subjectControl factor
dc.subjectDevice simulation
dc.subjectProcess simulation
dc.subjectTaguchi method
dc.titleOptimization of input process parameters variation on threshold voltage in 45 nm NMOS deviceen_US
dc.typeArticleen_US
dspace.entity.typePublication
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