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Effects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin films

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dc.citedby5
dc.contributor.authorSamad M.I.A.en_US
dc.contributor.authorNoor M.M.en_US
dc.contributor.authorNayan N.en_US
dc.contributor.authorBakar A.S.A.en_US
dc.contributor.authorMansor M.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorHamzah A.A.en_US
dc.contributor.authorLatif R.en_US
dc.contributor.authorid57768220600en_US
dc.contributor.authorid55330047100en_US
dc.contributor.authorid8881976900en_US
dc.contributor.authorid55752997100en_US
dc.contributor.authorid57222998145en_US
dc.contributor.authorid56589966300en_US
dc.contributor.authorid12792679600en_US
dc.contributor.authorid36675085500en_US
dc.date.accessioned2024-10-14T03:19:03Z
dc.date.available2024-10-14T03:19:03Z
dc.date.issued2023
dc.description.abstractThe growth of highly crystalline c-plane AlN �002� is extremely difficult, entailing high temperature and ultra-high vacuum condition. In sputtering technique, the addition of nitrogen into argon sputtering gas can significantly assist the formation of AlN �002� at low temperature. We incorporated purified nitrogen gas and observed the consistent formation of single crystal �002� AlN thin film layer sputter-deposited on Mo/Si substrate from the AlN ceramic target. Small presence of oxygen content within AlN crystal relates to the preferential growth of AlN �002�. High oxygen content in AlN thin film due to the use of unpurified nitrogen and argon only sputtering gas prefers the formation of AlN �100�. Different AlN crystal structure has shown distinct thin film properties and piezoelectric response. This work provides a method to control the crystal structure of the sputter-deposited AlN thin film layer, either c-plane AlN �002�, a-plane AlN �100� or polycrystalline AlN. � 2022 Acta Materialia Inc.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo115228
dc.identifier.doi10.1016/j.scriptamat.2022.115228
dc.identifier.scopus2-s2.0-85143883803
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85143883803&doi=10.1016%2fj.scriptamat.2022.115228&partnerID=40&md5=288193ba460352dea504786b1c696221
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34324
dc.identifier.volume226
dc.publisherActa Materialia Incen_US
dc.sourceScopus
dc.sourcetitleScripta Materialia
dc.subjectAluminium nitride
dc.subjectArgon plasma
dc.subjectCrystallography
dc.subjectPiezoelectric force microscopy (PFM)
dc.subjectRadio frequency (RF) sputtering
dc.subjectArgon
dc.subjectCrystal structure
dc.subjectCrystallography
dc.subjectGas adsorption
dc.subjectIII-V semiconductors
dc.subjectNitrogen
dc.subjectOxygen
dc.subjectPiezoelectricity
dc.subjectSingle crystals
dc.subjectSputtering
dc.subjectTemperature
dc.subjectThin films
dc.subjectAlN thin films
dc.subjectArgon plasmas
dc.subjectCrystals structures
dc.subjectMicro-structural properties
dc.subjectOxygen content
dc.subjectPiezoelectric force microscopy
dc.subjectRadio frequency sputtering
dc.subjectSputtering gas
dc.subjectThin film layers
dc.subjectAluminum nitride
dc.titleEffects of argon/nitrogen sputtering gas on the microstructural, crystallographic and piezoelectric properties of AlN thin filmsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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