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The role of deposition temperature in the photovoltaic properties of rf-sputtered cdse thin films

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dc.citedby11
dc.contributor.authorRosly H.N.en_US
dc.contributor.authorRahman K.S.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorHarif M.N.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid36873451800en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid22634024000en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid6506899840en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T09:12:30Z
dc.date.available2023-05-29T09:12:30Z
dc.date.issued2021
dc.description.abstractCadmium selenide (CdSe) thin films were grown on borosilicate glass substrates using the RF magnetron sputtering method. In this study, CdSe thin film was deposited at a deposition temperature in the range of 25?C to 400?C. The influence of deposition or growth temperature on the structural, morphological, and opto-electrical properties of CdSe films was investigated elaborately to achieve a good-quality window layer for solar-cell applications. The crystal structure, surface morphology, and opto-electrical characteristics of sputtered CdSe films were determined using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), UV�Vis spectrophotometry, and Hall effect measurement, respectively. The XRD results revealed the polycrystalline nature of CdSe, with a hexagonal structure having a strong preferential orientation toward the (002) plane. As evident from the FESEM images, the average grain size and surface morphology of the films were dependent on deposition temperatures. The carrier concentration was obtained as 1014 cm?3. The band gap in the range of 1.65�1.79 eV was found. The explored results suggested that sputtered CdSe thin film deposited at 300?C has the potential to be used as a window layer in solar cells. � 2021 by the authors. Licensee MDPI, Basel, Switzerland.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo73
dc.identifier.doi10.3390/cryst11010073
dc.identifier.epage13
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85099986034
dc.identifier.spage1
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85099986034&doi=10.3390%2fcryst11010073&partnerID=40&md5=9dabc6d69327b481745e5b0aa5067eac
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26597
dc.identifier.volume11
dc.publisherMDPI AGen_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleCrystals
dc.titleThe role of deposition temperature in the photovoltaic properties of rf-sputtered cdse thin filmsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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