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Numerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thickness

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dc.citedby4
dc.contributor.authorImamzai M.en_US
dc.contributor.authorAghaei M.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid55833049900en_US
dc.contributor.authorid57216285233en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-12-28T04:13:02Z
dc.date.available2023-12-28T04:13:02Z
dc.date.issued2013
dc.description.abstractThe main purpose of this paper is to investigate the effect of bandgap, carrier concentration, minority carrier life time and CdZnTe absorber layer thickness on the thin film solar cell baseline case. The bandgap of Cd 1-xZnx Te solar cells are tunable between 1.4SeV and 2.2eV (depends on the value of x). In this research AMPS-1D has been used for simulation. The results of this study indicate that by decreasing the absorber layer's thickness, the efficiency decreases. In the baseline cases, the absorber layer's bandgap was changed from 1.45eV to 2.05eV, It was found out that by increasing the energy gap, efficiency increases but after 1.85ev the bandgap will be constant, hence Eg=1.88eV was considered for absorber to analyze the baseline cases. It was observed that by increasing the lifetime and carrier concentrations of absorber layer, the output parameters increase in the cells. However, the baseline cases structures are the same (SnO 2/CdS/CdZnTe/Back Contact) and the highest conversion efficiency of 25.505% is obtained by baseline case 2 (Jsc= 29.819 mA/cm 2, Voc = 1.28 Volt, FF= 0.731) which has higher doping and minority carriers lifetime. � 2013 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6687076
dc.identifier.doi10.1109/ICP.2013.6687076
dc.identifier.epage89
dc.identifier.scopus2-s2.0-84893543544
dc.identifier.spage87
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84893543544&doi=10.1109%2fICP.2013.6687076&partnerID=40&md5=43528827c16d5af24044118defb6c817
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/29431
dc.pagecount2
dc.sourceScopus
dc.sourcetitle4th International Conference on Photonics, ICP 2013 - Conference Proceeding
dc.subjectAMPS-1D
dc.subjectCd<sub>1-x</sub>Zn<sub>x</sub>Te solar cells
dc.subjectEfficiency
dc.subjectThin film solar cells
dc.subjectTunable bandgap
dc.subjectCadmium alloys
dc.subjectCarrier concentration
dc.subjectEfficiency
dc.subjectEnergy gap
dc.subjectFilm thickness
dc.subjectPhotonics
dc.subjectThin films
dc.subjectZinc
dc.subjectAbsorber layers
dc.subjectAMPS-1D
dc.subjectEfficiency increase
dc.subjectMinority carrier
dc.subjectNumerical modeling and analysis
dc.subjectOutput parameters
dc.subjectThin film solar cells
dc.subjectTunable Band-gap
dc.subjectSolar cells
dc.titleNumerical modeling and analysis of CdS/Cd1-xZnx Te solar cells as a function of CdZnTe doping, lifetime and thicknessen_US
dc.typeConference paperen_US
dspace.entity.typePublication
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