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A comprehensive study on the effects of alternative sulphur precursor on the material properties of chemical bath deposited CdS thin films

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dc.citedby16
dc.contributor.authorAzmi N.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorYusoff Y.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid36715913200en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57206844407en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T08:08:44Z
dc.date.available2023-05-29T08:08:44Z
dc.date.issued2020
dc.descriptionAmorphous films; Cadmium sulfide; Carrier concentration; Deposition; Energy gap; II-VI semiconductors; Lime; Morphology; Substrates; Surface morphology; Surface roughness; Thioureas; Average surface roughness; Chemical-bath deposition; Granular structuress; Micro-structural; N-methylthiourea; Optical and electrical properties; Precursor concentration; Soda lime glass substrate; Thin filmsen_US
dc.description.abstractChemical bath deposition (CBD) method was used to deposit CdS thin films on soda-lime glass substrates by using n-methylthiourea (NTU) as an alternative sulphur source and were compared to typical thiourea (TU) precursor. The sulphur source concentration was varied from 0.01 M to 0.1 M and the impact on the microstructural, surface morphology, optical and electrical properties of the grown films were studied. Increasing n-methylthiourea concentration in the precursor yielded thinner films that are less than 100 nm thickness, surface morphology with average surface roughness of 6.4 nm, larger granular structure, wider band gap at 2.3 eV�2.6 eV range. Raman spectroscopy revealed Raman peak at 303 cm-1. In contrast, an increase in thiourea concentration resulted in thinner amorphous films, less distinct granular structure, narrower energy band gap from 2.3 eV to 2.4 eV and a resonance Raman peak at 302 cm-1. CdS thin film deposited from n-methylthiourea precursor at higher precursor concentration of 0.1 M showed better electrical properties such as lower resistivity and higher carrier mobility compared to the thin film deposited from typical thiourea precursor. � 2020 Elsevier Ltd and Techna Group S.r.l.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.ceramint.2020.04.186
dc.identifier.epage18724
dc.identifier.issue11
dc.identifier.scopus2-s2.0-85084239222
dc.identifier.spage18716
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85084239222&doi=10.1016%2fj.ceramint.2020.04.186&partnerID=40&md5=e89381528d7bc38a75a1bf75e56d3bfa
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25379
dc.identifier.volume46
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleCeramics International
dc.titleA comprehensive study on the effects of alternative sulphur precursor on the material properties of chemical bath deposited CdS thin filmsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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