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Effect of selective lateral chromium doping by rf magnetron sputtering on the structural, and opto-electrical properties of nickel oxide

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dc.citedby3
dc.contributor.authorJamal M.S.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorMisran H.en_US
dc.contributor.authorNasrin T.en_US
dc.contributor.authorAlthubeiti K.en_US
dc.contributor.authorAlkhammash H.I.en_US
dc.contributor.authorShahiduzzaman M.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid55887499100en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid6506899840en_US
dc.contributor.authorid57218826777en_US
dc.contributor.authorid57209509894en_US
dc.contributor.authorid56711980800en_US
dc.contributor.authorid55640096500en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:05:21Z
dc.date.available2023-05-29T09:05:21Z
dc.date.issued2021
dc.description.abstractIn this study, chromium (Cr)-doped nickel oxide (NiO) thin films were deposited by employing selective lateral doping of Cr in NiO by radio-frequency magnetron sputtering at different doping times ranging from 0 s (undoped) to 80 s. The structural, optical, and electrical properties of the resulting Cr-doped NiO thin films were investigated. Structural investigation from XRD patterns indicated that the grown Cr-doped NiO layer crystallized in a cubic phase. Broadening of the diffraction peak with increasing doping time from 0 s to 80 s led to a reduction in the crystallite size that varied from 23.52 nm to 14.65 nm. Compared with the undoped NiO, the diffraction peak along the (200) plane shifted from left to right as a function of doping time. This result indicated that Cr+3 could easily enter the NiO lattice. Results from the Hall-effect study disclosed that electrical properties of Cr-doped NiO was highly dependent on doping time. The conductivity of NiO was increased with doping time, and the highest conductivity (8.73 � 10?2 Scm?1) was achieved at a doping time of 80 s. Finally, optical investigations revealed that as doping time increased, the optical bandgap of Cr-doped NiO films dropped from 3.43 eV to 3.28 eV. The highest Urbach energy at higher doping time indicated that crystallinity became poorer, and the degree of defects increased with increasing doping time. � 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo11546
dc.identifier.doi10.3390/app112311546
dc.identifier.issue23
dc.identifier.scopus2-s2.0-85120782049
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85120782049&doi=10.3390%2fapp112311546&partnerID=40&md5=c6782bfecef3b5d1a7bb6c0950e3e87e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25865
dc.identifier.volume11
dc.publisherMDPIen_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleApplied Sciences (Switzerland)
dc.titleEffect of selective lateral chromium doping by rf magnetron sputtering on the structural, and opto-electrical properties of nickel oxideen_US
dc.typeArticleen_US
dspace.entity.typePublication
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