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Effects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin films

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dc.citedby28
dc.contributor.authorJamal M.S.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorAlharbi H.F.en_US
dc.contributor.authorKarim M.R.en_US
dc.contributor.authorAhmad Dar M.en_US
dc.contributor.authorLuqman M.en_US
dc.contributor.authorAlharthi N.H.en_US
dc.contributor.authorAl-Harthi Y.S.en_US
dc.contributor.authorAminuzzaman M.en_US
dc.contributor.authorAsim N.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid55887499100en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57188221000en_US
dc.contributor.authorid56820318000en_US
dc.contributor.authorid8586960200en_US
dc.contributor.authorid56715421200en_US
dc.contributor.authorid55942800300en_US
dc.contributor.authorid8901076400en_US
dc.contributor.authorid6506337885en_US
dc.contributor.authorid55902096700en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T07:23:56Z
dc.date.available2023-05-29T07:23:56Z
dc.date.issued2019
dc.description.abstractIn this study, nickel oxide (NiO) thin films were deposited on soda lime glass using radio-frequency magnetron sputtering at different growth (substrate) temperatures ranging from room temperature (RT) to 400 �C. The effects of substrate temperature on the structural, morphological, electrical, and optical properties were investigated. The XRD pattern unveiled a dominant peak with (2 0 0) preferential orientations for the film grown at 100 �C. However, for samples grown at high temperatures, a gradual decrease of (2 0 0) peak intensity was observed, which may be the result of the decomposition of NiO as confirmed via EDX. Surface morphology from FESEM revealed that grains were randomly orientated on the surface with maximum grain size of 19.43 nm. Upon increasing the growth temperature, the crystal quality and grain size substantially deteriorated, which is consistent with the XRD results. Scanning probe microscopy (SPM) finds rough surface with the highest surface roughness obtained at RT with a value of 1.232 nm. Electrical resistivity was found to be highly dependent on the growth temperature that decreases from 2150 ? cm to 72 ? cm as the substrate temperature increases. For optical properties, the optical bandgap of the NiO films decreases from 3.8 eV to 3.2 eV as a function of substrate temperature as derived from the optical transmittance data. Results show the potential application of the NiO films in photovoltaic devices. � 2019 The Authorsen_US
dc.description.natureFinalen_US
dc.identifier.ArtNo102360
dc.identifier.doi10.1016/j.rinp.2019.102360
dc.identifier.scopus2-s2.0-85067187106
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85067187106&doi=10.1016%2fj.rinp.2019.102360&partnerID=40&md5=357c6acba3a33e9829050f30f9bfd8a3
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24487
dc.identifier.volume14
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleResults in Physics
dc.titleEffects of growth temperature on the photovoltaic properties of RF sputtered undoped NiO thin filmsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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