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Probing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interface

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dc.citedby5
dc.contributor.authorZa�abar F.?.en_US
dc.contributor.authorMahmood Zuhdi A.W.en_US
dc.contributor.authorDoroody C.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorYusoff Y.en_US
dc.contributor.authorAbdullah S.F.en_US
dc.contributor.authorBahrudin M.S.en_US
dc.contributor.authorWan Adini W.S.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorWan Abdullah W.S.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid56374530600en_US
dc.contributor.authorid56589966300en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57206844407en_US
dc.contributor.authorid14319069500en_US
dc.contributor.authorid55603412800en_US
dc.contributor.authorid56103771700en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid58175300700en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2024-10-14T03:18:47Z
dc.date.available2024-10-14T03:18:47Z
dc.date.issued2023
dc.description.abstractThe effect of Mo thin film deposition power in DC sputtering on the formation of a MoSe2 interfacial layer grown via the annealing of CIGSe/Mo precursors in an Se-free atmosphere was investigated. A Mo layer was deposited on glass substrates using the DC magnetron sputtering method. Its electrical resistivity, as well as its morphological, structural, and adhesion characteristics, were analyzed regarding the deposition power. In the case of thinner films of about 300 nm deposited at 80 W, smaller grains and a lower volume percentage of grain boundaries were found, compared to 510 nm thick film with larger agglomerates obtained at 140 W DC power. By increasing the deposition power, in contrast, the conductivity of the Mo film significantly improved with lowest sheet resistance of 0.353 ?/square for the sample deposited at 140 W. Both structural and Raman spectroscopy outputs confirmed the pronounced formation of MoSe2, resulting from Mo films with predominant (110) orientated planes. Sputtered Mo films deposited at 140 W power improved Mo crystals and the growth of MoSe2 layers with a preferential (103) orientation upon the Se-free annealing. With a more porous Mo surface structure for the sample deposited at higher power, a larger contact area developed between the Mo films and the Se compound was found from the CIGSe film deposited on top of the Mo, favoring the formation of MoSe2. The CIGSe/Mo hetero-contact, including the MoSe2 layer with controlled thickness, is not Schottky-type, but a favourable ohmic-type, as evaluated by the dark I-V measurement at room temperature (RT). These findings support the significance of regulating the thickness of the unintentional MoSe2 layer growth, which is attainable by controlling the Mo deposition power. Furthermore, while the adhesion between the CIGSe absorber layer and the Mo remains intact, the resistance of final devices with the Ni/CIGSe/Mo structure was found to be directly linked to the MoSe2 thickness. Consequently, it addresses the importance of MoSe2 structural properties for improved CIGSe solar cell performance and stability. � 2023 by the authors.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo2497
dc.identifier.doi10.3390/ma16062497
dc.identifier.issue6
dc.identifier.scopus2-s2.0-85152057125
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85152057125&doi=10.3390%2fma16062497&partnerID=40&md5=6ec9adba4b081f1588e4d53f8ae32421
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34278
dc.identifier.volume16
dc.publisherMDPIen_US
dc.relation.ispartofAll Open Access
dc.relation.ispartofGold Open Access
dc.relation.ispartofGreen Open Access
dc.sourceScopus
dc.sourcetitleMaterials
dc.subjectCIGSe
dc.subjectDC magnetron sputtering
dc.subjectdeposition power
dc.subjectenergy
dc.subjectmolybdenum
dc.subjectmolybdenum diselenide (MoSe<sub>2</sub>)
dc.subjectsolar cells
dc.subjectAdhesion
dc.subjectCrystal orientation
dc.subjectGlass substrates
dc.subjectGrain boundaries
dc.subjectMolybdenum compounds
dc.subjectSelenium compounds
dc.subjectSurface structure
dc.subjectThick films
dc.subjectThin film solar cells
dc.subjectThin films
dc.subjectBack contact
dc.subjectCIGSe
dc.subjectContact layers
dc.subjectDC magnetra sputtering
dc.subjectDeposition power
dc.subjectEnergy
dc.subjectMagnetron-sputtering
dc.subjectMo films
dc.subjectMolybdenum diselenide (mose2)
dc.subjectPower
dc.subjectMagnetron sputtering
dc.titleProbing the Interplay between Mo Back Contact Layer Deposition Condition and MoSe2 Layer Formation at the CIGSe/Mo Hetero-Interfaceen_US
dc.typeArticleen_US
dspace.entity.typePublication
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