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Numerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices

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dc.citedby13
dc.contributor.authorNajm A.S.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorTiong S.K.en_US
dc.contributor.authorFerdaous M.T.en_US
dc.contributor.authorShahahmadi S.A.en_US
dc.contributor.authorYusoff Y.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorid57194407055en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid15128307800en_US
dc.contributor.authorid55567613100en_US
dc.contributor.authorid55567116600en_US
dc.contributor.authorid57206844407en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.date.accessioned2023-05-29T09:12:34Z
dc.date.available2023-05-29T09:12:34Z
dc.date.issued2021
dc.description.abstractA CdS thin film buffer layer has been widely used as conventional n-type heterojunction partner both in established and emerging thin film photovoltaic devices. In this study, we perform numerical simulation to elucidate the influence of electrical properties of the CdS buffer layer, essentially in terms of carrier mobility and carrier concentration on the performance of SLG/Mo/p- Absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devices, by using the Solar Cell Capacitance Simulator (SCAPS-1D). A wide range of p-type absorber layers with a band gap from 0.9 to 1.7 eV and electron affinity from 3.7 to 4.7 eV have been considered in this simulation study. For an ideal absorber layer (no defect), the carrier mobility and carrier concentration of CdS buffer layer do not significantly alter the maximum attainable efficiency. Generally, it was revealed that for an absorber layer with a conduction band offset (CBO) that is more than 0.3 eV, Jsc is strongly dependent on the carrier mobility and carrier concentration of the CdS buffer layer, whereas Voc is predominantly dependent on the back contact barrier height. However, as the bulk defect density of the absorber layer is increased from 1014 to 1018 cm-3, a CdS buffer layer with higher carrier mobility and carrier concentration is an imperative requirement to a yield device with higher conversion efficiency and a larger band gap-CBO window for realization of a functional device. Most tellingly, simulation outcomes from this study reveal that electrical properties of the CdS buffer layer play a decisive role in determining the progress of emerging p-type photo-absorber layer materials, particularly during the embryonic device development stage. � 2021 by the authors.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo52
dc.identifier.doi10.3390/coatings11010052
dc.identifier.epage17
dc.identifier.issue1
dc.identifier.scopus2-s2.0-85099645613
dc.identifier.spage1
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85099645613&doi=10.3390%2fcoatings11010052&partnerID=40&md5=1036e398c22967d01ffe0767e5558bdb
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26600
dc.identifier.volume11
dc.publisherMDPI AGen_US
dc.relation.ispartofAll Open Access, Gold
dc.sourceScopus
dc.sourcetitleCoatings
dc.titleNumerical insights into the influence of electrical properties of n-CdS buffer layer on the performance of SLG/Mo/p-absorber/n-CdS/n-ZnO/Ag configured thin film photovoltaic devicesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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