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Effect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursor

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dc.citedby6
dc.contributor.authorNurhafiza K.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorSobayel K.en_US
dc.contributor.authorMunna F.T.en_US
dc.contributor.authorAbdullah H.en_US
dc.contributor.authorIbrahim M.A.en_US
dc.contributor.authorTechato K.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorAkhtaruzzaman M.en_US
dc.contributor.authorid57215945332en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid57194049079en_US
dc.contributor.authorid57200988091en_US
dc.contributor.authorid26025061200en_US
dc.contributor.authorid55843508000en_US
dc.contributor.authorid25321184300en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57195441001en_US
dc.date.accessioned2023-05-29T09:09:11Z
dc.date.available2023-05-29T09:09:11Z
dc.date.issued2021
dc.descriptionCadmium sulfide; Deposition; Hall mobility; Hole mobility; II-VI semiconductors; Molar concentration; Morphology; Pollution; Thioureas; Zinc compounds; As-grown films; Chemical bath deposition technique; Chemical-bath deposition; Fabrication process; Raman peak; S thin films; Sulfur precursor; Ternary semiconductors; Thin filmsen_US
dc.description.abstractTernary semiconductor CdxZn(1?x)S thin films are prepared by chemical bath deposition (CBD) using N-methyl thiourea as an alternative sulfur precursor. Molar concentration of CdSO4 has been varied from 0.01 M to 0.09 M during the fabrication process of CdxZn(1?x)S thin film. Effect of variation in Cd2+ molar concentration on morphological, structural and opto-electrical properties of CdxZn(1?x)S thin film has been investigated. As grown films are found less crystalline and structural analysis suggests that CdxZn(1?x)S phase changes with the increase of Cd2+ molar concentration. SEM images reveals that all the films exhibit granules-like morphology. Raman peak indicates that higher concentration of CdSO4 precursor forms more CdS in the CdxZn(1?x)S. Bandgaps of CdxZn(1?x)S thin films are found to be ranged from 2.44 eV to 2.95 eV for different Cd2+ molar concentrations in the CdxZn(1?x)S thin films. Resistivity and carrier mobility of as grown CdxZn(1?x)S films ranged from 14.2 � 103 ohm-cm to 2.25 � 103 ohm-cm and 4.31 cm2 (V s)?1 to 9.42 cm2 (V s)?1, respectively. As all these findings affirms the credibility of using N-methyl thiourea as an alternative sulfur precursor for the development of CdxZn(1?x)S thin film by CBD process. � 2021 The Electrochemical Societyen_US
dc.description.natureFinalen_US
dc.identifier.ArtNo25009
dc.identifier.doi10.1149/2162-8777/abe58e
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85102595565
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85102595565&doi=10.1149%2f2162-8777%2fabe58e&partnerID=40&md5=40a71c33959e8b195baae77d6b16554f
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/26330
dc.identifier.volume10
dc.publisherIOP Publishing Ltden_US
dc.sourceScopus
dc.sourcetitleECS Journal of Solid State Science and Technology
dc.titleEffect of Cd2+ molar concentration in CdxZn(1?x)S thin film by chemical bath deposition technique using alternative sulfur precursoren_US
dc.typeArticleen_US
dspace.entity.typePublication
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