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Recent advances of In2O3-based thin-film transistors: A review

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dc.citedby6
dc.contributor.authorYap B.K.en_US
dc.contributor.authorZhang Z.en_US
dc.contributor.authorThien G.S.H.en_US
dc.contributor.authorChan K.-Y.en_US
dc.contributor.authorTan C.Y.en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid58293773000en_US
dc.contributor.authorid56152438600en_US
dc.contributor.authorid15064967600en_US
dc.contributor.authorid16029485400en_US
dc.date.accessioned2024-10-14T03:17:54Z
dc.date.available2024-10-14T03:17:54Z
dc.date.issued2023
dc.description.abstractThe electronics industry has witnessed a surge in demand for semiconductor materials, prompting researchers to explore active semiconductors that can effectively meet the growing needs of this sector. Among these materials, indium oxide (In2O3) is a potential candidate for developing thin-film transistors (TFTs) in organic light-emitting diodes. This emergence is due to the favourable characteristics of In2O3, such as high carrier mobility, low processing temperature, strong electrical uniformity, transparency to visible light, and low cost. Currently, In2O3-based TFTs are fabricated with excellent properties, including electron mobility up to 400 cm2 / V s, subthreshold swing as low as 0.13 V/decade, on/off current ratio up to 108, a threshold voltage of approximately 1 to 3 V, and transparency up to 90% in the visible range. Hence, this review aims to provide an overview of the carrier transport mechanism of metal oxide semiconductor materials, specifically focusing on In2O3-based TFTs (amorphous and crystalline). Furthermore, this study discusses the structural properties of pure, doped, homojunction, heterojunction, and other In2O3-based TFTs before demonstrating the recent advancements in the field. Lastly, this review presents potential outcomes and future perspectives of In2O3-based TFTs in developing semiconductor technology. Based on this review, In2O3-based TFTs are effectively explored regarding their future integration into modern technologies. � 2023 The Author(s)en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo100423
dc.identifier.doi10.1016/j.apsadv.2023.100423
dc.identifier.scopus2-s2.0-85160514383
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85160514383&doi=10.1016%2fj.apsadv.2023.100423&partnerID=40&md5=77e87a65f2bcaa74bd50fb138132288f
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34085
dc.identifier.volume16
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access
dc.relation.ispartofGold Open Access
dc.sourceScopus
dc.sourcetitleApplied Surface Science Advances
dc.subjectDoping
dc.subjectHeterojunction
dc.subjectHomojunction
dc.subjectIn<sub>2</sub>O<sub>3</sub>
dc.subjectSemiconductor
dc.subjectThin-film transistors
dc.titleRecent advances of In2O3-based thin-film transistors: A reviewen_US
dc.typeReviewen_US
dspace.entity.typePublication
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