Publication:
Optimization of process parameter variability in 45 nm PMOS device using Taguchi method

Simple item page
dc.citedby4
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorZaharim A.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603573875en_US
dc.contributor.authorid15119466900en_US
dc.date.accessioned2023-12-29T07:48:57Z
dc.date.available2023-12-29T07:48:57Z
dc.date.issued2011
dc.description.abstractThis study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (Rs) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain Implantation, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the poly sheet resistance and leakage current were determined by using Analysis of Variance (ANOVA). Virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. The optimum process parameter combination was obtained by using the analysis of Signal-to-Noise (S/N) ratio. The confirmation tests indicated that it is possible to decrease the poly sheet resistance and leakage current significantly by using the Taguchi method. The results show that the Rs and ILeak after optimizations approaches are 67.53 ?, sq-1 and 0.1850 m A ?m-1, respectively. In this study, S/D implantation was identified as one of the process parameters that has the strongest effect on the response characteristics. � 2011 Asian Network for Scientific Information.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.3923/jas.2011.1261.1266
dc.identifier.epage1266
dc.identifier.issue7
dc.identifier.scopus2-s2.0-79953304756
dc.identifier.spage1261
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-79953304756&doi=10.3923%2fjas.2011.1261.1266&partnerID=40&md5=cb13db53750cf279bca3c073b1ba2e6c
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30528
dc.identifier.volume11
dc.pagecount5
dc.relation.ispartofAll Open Access; Bronze Open Access
dc.sourceScopus
dc.sourcetitleJournal of Applied Sciences
dc.subject45 nm PMOS device
dc.subjectOptimization
dc.subjectSilvaco
dc.subjectTaguchi method
dc.subjectVariability
dc.titleOptimization of process parameter variability in 45 nm PMOS device using Taguchi methoden_US
dc.typeArticleen_US
dspace.entity.typePublication
Files
Collections
SCOPUS