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In-situ analysis energy level alignment at solution processed HAT(CN)6/PVK (PVK:TAPC) interface via XPS and UPS

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dc.citedby7
dc.contributor.authorTalik N.A.en_US
dc.contributor.authorYap B.K.en_US
dc.contributor.authorTan C.Y.en_US
dc.contributor.authorWhitcher T.J.en_US
dc.contributor.authorid55576358000en_US
dc.contributor.authorid26649255900en_US
dc.contributor.authorid16029485400en_US
dc.contributor.authorid26641611700en_US
dc.date.accessioned2023-05-29T06:38:00Z
dc.date.available2023-05-29T06:38:00Z
dc.date.issued2017
dc.descriptionHeterojunctions; Interfaces (materials); Light emitting diodes; Organic light emitting diodes (OLED); Photoelectrons; Photons; Charge-generation layers; Electron extraction; Energy differences; Energy level alignment; Poly(9-vinylcarbazole); Solution-processed; Tandem OLED; Vacuum level shift; X ray photoelectron spectroscopyen_US
dc.description.abstractWe present in-depth analysis of an n/p heterojunction that consists of 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT(CN)6) (n-type) and Poly(9-vinylcarbazole) (PVK) (p-type) via X-ray Photoelectron Spectroscopy (XPS) and Ultra-violet Photoelectron Spectroscopy (UPS) measurement. The p-type layer is doped with 2�wt% of 1,1-bis-(4-bis(4-tolyl)-aminophenyl) cyclohexene (TAPC). The energy difference (?E) at the hetero-junction, magnitude of band bending (Vb) and the vacuum level shift at the interface is modified when PVK is doped with 2�wt% TAPC. The presence of Vb at the HAT(CN)6/PVK (PVK:TAPC) interface makes it easier to reach a ?E ? 0 energy offset in order to facilitate charge generation at the interface. Via a Fowler-Nordheim (FN) tunneling curve, it is found that the electron extraction from PVK to HAT(CN)6�at the interface could occur via the tunneling process. This finding provides new insights into novel solutions for high efficiency tandem OLEDs. � 2017 Elsevier B.V.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.cap.2017.04.012
dc.identifier.epage1099
dc.identifier.issue8
dc.identifier.scopus2-s2.0-85018723533
dc.identifier.spage1094
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85018723533&doi=10.1016%2fj.cap.2017.04.012&partnerID=40&md5=a938439101431e7696779b830cdce7bd
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/23148
dc.identifier.volume17
dc.publisherElsevier B.V.en_US
dc.sourceScopus
dc.sourcetitleCurrent Applied Physics
dc.titleIn-situ analysis energy level alignment at solution processed HAT(CN)6/PVK (PVK:TAPC) interface via XPS and UPSen_US
dc.typeArticleen_US
dspace.entity.typePublication
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