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Incorporation of Magnesium-doped Zinc Oxide (MZO) HRT Layer in Cadmium Telluride (CdTe) Solar Cells

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dc.citedby4
dc.contributor.authorDoroody C.en_US
dc.contributor.authorSajedur Rahman K.en_US
dc.contributor.authorChelvanathan P.en_US
dc.contributor.authorAdib Ibrahim M.en_US
dc.contributor.authorSopian K.en_US
dc.contributor.authorAmin N.en_US
dc.contributor.authorChowdhury S.en_US
dc.contributor.authorChannumsin S.en_US
dc.contributor.authorid56905467200en_US
dc.contributor.authorid56348138800en_US
dc.contributor.authorid35766323200en_US
dc.contributor.authorid55843508000en_US
dc.contributor.authorid7003375391en_US
dc.contributor.authorid7102424614en_US
dc.contributor.authorid57224213317en_US
dc.contributor.authorid56288633800en_US
dc.date.accessioned2024-10-14T03:18:46Z
dc.date.available2024-10-14T03:18:46Z
dc.date.issued2023
dc.description.abstractThe insertion of a highly resistive transparent (HRT) layer with the ability to transfer an optimum portion of the UV range of sunlight is targeted in this study by bandgap engineering through varying the thickness as well as the concentration of dopants. The integrability of ZnO and Mg-doped ZnO (MZO) as the potential HRT layers for CdTe solar cell devices with the possibility of bandgap management, high transmission at short wavelength and reduced current loss by inhibiting holes from reaching interfacial defects is proposed. Using SCAPS-1D modelling software, key performance parameters such as open circuit voltage (Voc), short circuit current (Jsc), fill factor (FF), conversion efficiency (?), and quantum efficiency (QE) were evaluated for the proposed devices by varying the carrier concentration and series resistance (Rs). The simulation was carried out based on experimental data such as thickness, optical characteristics and bandgap to validate the findings. Results showed that the conversion efficiency for thin-film solar cells of ITO/CdS/CdTe, ITO/ZnO/CdS/CdTe and ITO/MZO/CdS/CdTe were attained to be 17.83%, 18.76% and 20.27%, respectively. The optimal carrier concentration using ZnO, and MZO was found to be 1016 cm?3 for an efficient CdTe solar cells design. � 2023en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo106337
dc.identifier.doi10.1016/j.rinp.2023.106337
dc.identifier.scopus2-s2.0-85150900077
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85150900077&doi=10.1016%2fj.rinp.2023.106337&partnerID=40&md5=ac7736b6917a68f7f503b07d32899a43
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/34273
dc.identifier.volume47
dc.publisherElsevier B.V.en_US
dc.relation.ispartofAll Open Access
dc.relation.ispartofGold Open Access
dc.sourceScopus
dc.sourcetitleResults in Physics
dc.subjectCdTe thin films
dc.subjectHRT layer
dc.subjectMagnesium-doped Zinc Oxide (MZO)
dc.subjectSCAPS-1D
dc.subjectSolar cells
dc.subjectZnO
dc.titleIncorporation of Magnesium-doped Zinc Oxide (MZO) HRT Layer in Cadmium Telluride (CdTe) Solar Cellsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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