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Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules

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dc.citedby95
dc.contributor.authorAkagi H.en_US
dc.contributor.authorYamagishi T.en_US
dc.contributor.authorTan N.M.L.en_US
dc.contributor.authorMiyazaki Y.en_US
dc.contributor.authorKinouchi S.-I.en_US
dc.contributor.authorKoyama M.en_US
dc.contributor.authorid7102912290en_US
dc.contributor.authorid57212336284en_US
dc.contributor.authorid24537965000en_US
dc.contributor.authorid56149085900en_US
dc.contributor.authorid6602155998en_US
dc.contributor.authorid7201421649en_US
dc.date.accessioned2023-05-29T06:02:13Z
dc.date.available2023-05-29T06:02:13Z
dc.date.issued2015
dc.descriptionConversion efficiency; HVDC power transmission; MOSFET devices; Silicon carbide; Bidirectional isolated dc-dc converter; Conduction loss; Control circuits; Dual active bridges; Gate drives; Power-losses; SiC MOSFET; Switching loss; DC-DC convertersen_US
dc.description.abstractThis paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation. � 1972-2012 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo6839038
dc.identifier.doi10.1109/TIA.2014.2331426
dc.identifier.epage428
dc.identifier.issue1
dc.identifier.scopus2-s2.0-84921516343
dc.identifier.spage420
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84921516343&doi=10.1109%2fTIA.2014.2331426&partnerID=40&md5=9c7b3ed6838b92a04c59103e389c47a7
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22577
dc.identifier.volume51
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleIEEE Transactions on Industry Applications
dc.titlePower-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modulesen_US
dc.typeArticleen_US
dspace.entity.typePublication
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