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A low power and low ripple CMOS high voltage generator for RFID transponder EEPROM

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dc.citedby4
dc.contributor.authorRahman L.F.en_US
dc.contributor.authorMarufuzzaman M.en_US
dc.contributor.authorAlam L.en_US
dc.contributor.authorSidek L.M.en_US
dc.contributor.authorReaz M.B.I.en_US
dc.contributor.authorid36984229900en_US
dc.contributor.authorid57205234835en_US
dc.contributor.authorid37053462100en_US
dc.contributor.authorid35070506500en_US
dc.contributor.authorid6602752147en_US
dc.date.accessioned2023-05-29T08:11:16Z
dc.date.available2023-05-29T08:11:16Z
dc.date.issued2020
dc.descriptionArticle; controlled study; direct current; electric potential; energy; radiofrequency identification; simulation; software; electricity; equipment design; power supply; procedures; radio frequency identification device; radiofrequency radiation; software; transistor; Electric Power Supplies; Electricity; Equipment Design; Radio Frequency Identification Device; Radio Waves; Software; Transistors, Electronicen_US
dc.description.abstractA high-voltage generator (HVG) is an essential part of a radio frequency identification electrically erasable programmable read-only memory (RFID-EEPROM). An HVG circuit is used to generate a regulated output voltage that is higher than the power supply voltage. However, the performance of the HVG is affected owing to the high-power dissipation, high-ripple voltage and low-pumping efficiency. Therefore, a regulator circuit consists of a voltage divider, comparator and a voltage reference, which are respectively required to reduce the ripple voltage, increase pumping efficiency and decrease the power dissipation of the HVG. Conversely, a clock driving circuit consists of the current-starved ring oscillator (CSRO), and the non- overlapping clock generator is required to drive the clock signals of the HVG circuit. In this study, the Mentor Graphics EldoSpice software package is used to design and simulate the HVG circuitry. The results showed that the designed CSRO dissipated only 4.9 ?W at 10.2 MHz and that the phase noise was only -119.38 dBc/Hz at 1 MHz. Moreover, the proposed charge pump circuit was able to generate a maximum VPP of 13.53 V and it dissipated a power of only 31.01 ?W for an input voltage VDD of 1.8 V. After integrating all the HVG modules, the results showed that the regulated HVG circuit was also able to generate a higher VPP of 14.59 V, while the total power dissipated was only 0.12 mW with a chip area of 0.044 mm2. Moreover, the HVG circuit produced a pumping efficiency of 90% and reduced the ripple voltage to <4 mV. Therefore, the integration of all the proposed modules in HVG ensured low-ripple programming voltages, higher pumping efficiency, and EEPROMs with lower power dissipation, and can be extensively used in low-power applications, such as in non-volatile memory, radiofrequency identification transponders, on-chip direct current DC-DC converters. Copyright: � 2020 Rahman et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNoe0225408
dc.identifier.doi10.1371/journal.pone.0225408
dc.identifier.issue2
dc.identifier.scopus2-s2.0-85079040760
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85079040760&doi=10.1371%2fjournal.pone.0225408&partnerID=40&md5=818f14cab5cf6e3561b04da8241f068d
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/25584
dc.identifier.volume15
dc.publisherPublic Library of Scienceen_US
dc.relation.ispartofAll Open Access, Gold, Green
dc.sourceScopus
dc.sourcetitlePLoS ONE
dc.titleA low power and low ripple CMOS high voltage generator for RFID transponder EEPROMen_US
dc.typeArticleen_US
dspace.entity.typePublication
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