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Inverters with Different Loads for Ring Oscillators True Random Number Generator Analysis

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dc.contributor.authorHashim N.A.N.en_US
dc.contributor.authorLoong J.T.H.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorid57191482406en_US
dc.contributor.authorid57191483831en_US
dc.contributor.authorid6603573875en_US
dc.date.accessioned2023-05-29T07:24:03Z
dc.date.available2023-05-29T07:24:03Z
dc.date.issued2019
dc.descriptionCMOS integrated circuits; Electric inverters; Memristors; Metals; MOS devices; Nanoelectronics; Number theory; Oxide semiconductors; Random number generation; SPICE; Complementary metal-oxide-semiconductor technologies; Hardware and software; Memristor; Multilevels; Physical phenomena; Ring oscillator; Security issues; True randoms; Hardware securityen_US
dc.description.abstractThere have been a multitude of security issues surfacing in hardware security at the moment. The hardware and software systems are exposed to a lot of multi-level attacks in the cryptography aspect. True random number generator (TRNG) can provide an answer to the issues by producing random and unpredictable keys or numbers that can be used in hardware and the transactions of the network. The way these random output are produced are through physical phenomenon that produces entropies that can be sampled by TRNG. This research provides an idea on how the performance of TRNG can be enhanced by creating a more random output. Nanoelectronics such as memristors have been adopted and explored to tackle the issues. The memristor has been implemented in the TRNG designs to analyze the performance results of the ouput. Different loads such as transistors, resistor and memristor have been used in the TRNG to investigate the effect on the performance of the TRNG. The TRNG design uses complementary metal oxide semiconductor (CMOS) technology of 0.18\ \boldsymbol{\mu} \mathbf{m} and is simulated by LT SPICE IV. The TRNG design in 2nd scenario produces the best results and passed 10 out of 12 of the NIST tests compared to other scenarios. � 2019 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo8943568
dc.identifier.doi10.1109/RSM46715.2019.8943568
dc.identifier.epage155
dc.identifier.scopus2-s2.0-85078303834
dc.identifier.spage153
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85078303834&doi=10.1109%2fRSM46715.2019.8943568&partnerID=40&md5=e7a60d8bc684dbdef4379a39de61e343
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/24506
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleProceedings of the 2019 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2019
dc.titleInverters with Different Loads for Ring Oscillators True Random Number Generator Analysisen_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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