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Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method

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dc.citedby1
dc.contributor.authorMaheran A.H.A.en_US
dc.contributor.authorMenon P.S.en_US
dc.contributor.authorShaari S.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorFaizah Z.A.N.en_US
dc.contributor.authorid36570222300en_US
dc.contributor.authorid57201289731en_US
dc.contributor.authorid6603595092en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid56395444600en_US
dc.date.accessioned2023-05-29T05:59:36Z
dc.date.available2023-05-29T05:59:36Z
dc.date.issued2015
dc.descriptionElectron beam lithography; Field effect transistors; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Signal to noise ratio; Silicides; Taguchi methods; Threshold voltage; Titanium dioxide; 22 nm; Compensation implantations; High-k/metal gates; International Technology Roadmap for Semiconductors; L9 orthogonal arrays; PMOS; Process parameter variations; Statistical optimization; MOSFET devicesen_US
dc.description.abstractThis paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is-0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is-0.289 V � 12.7 %. � 2015 IEEE.en_US
dc.description.natureFinalen_US
dc.identifier.ArtNo7354989
dc.identifier.doi10.1109/RSM.2015.7354989
dc.identifier.scopus2-s2.0-84963795360
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84963795360&doi=10.1109%2fRSM.2015.7354989&partnerID=40&md5=8963e6a8da7791fc026e14de4107586e
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/22204
dc.publisherInstitute of Electrical and Electronics Engineers Inc.en_US
dc.sourceScopus
dc.sourcetitleRSM 2015 - 2015 IEEE Regional Symposium on Micro and Nano Electronics, Proceedings
dc.titleStatistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi methoden_US
dc.typeConference Paperen_US
dspace.entity.typePublication
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