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Optimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi method

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dc.citedby3
dc.contributor.authorSalehuddin F.en_US
dc.contributor.authorAhmad I.en_US
dc.contributor.authorHamid F.A.en_US
dc.contributor.authorZaharim A.en_US
dc.contributor.authorElgomati H.A.en_US
dc.contributor.authorMajlis B.Y.en_US
dc.contributor.authorApte P.R.en_US
dc.contributor.authorid36239165300en_US
dc.contributor.authorid12792216600en_US
dc.contributor.authorid6603573875en_US
dc.contributor.authorid15119466900en_US
dc.contributor.authorid36536722700en_US
dc.contributor.authorid6603071546en_US
dc.contributor.authorid55725529100en_US
dc.date.accessioned2023-12-29T07:48:08Z
dc.date.available2023-12-29T07:48:08Z
dc.date.issued2011
dc.description.abstractIn this study, the Taguchi method was used to optimize the effect of HALO structure or halo implant variations on threshold voltage (VTH) and leakage current (ILeak) in 45nm p-type Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) device. Besides halo implant dose, the other process parameters which used were Source/Drain (S/D) implant dose, oxide growth temperature and silicide anneal temperature. This work was done using TCAD simulator, consisting of a process simulator, ATHENA and device simulator, ATLAS. These two simulators were combined with Taguchi method to aid in design and optimize the process parameters. In this research, the most effective process parameters with respect to VTH and ILeak are halo implant dose (40%) and S/D implant dose (52%) respectively. Whereas the second ranking factor affecting VTH and ILeak are oxide growth temperature (32%) and halo implant dose (34%) respectively. The results show that after optimizations approaches is -0.157V at ILeak=0.195mA/?m.en_US
dc.description.natureFinalen_US
dc.identifier.epage1142
dc.identifier.scopus2-s2.0-84871458972
dc.identifier.spage1136
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84871458972&partnerID=40&md5=ca09d6c1530fb4ca53e7e8ab5b4aa4b3
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/30463
dc.identifier.volume51
dc.pagecount6
dc.sourceScopus
dc.sourcetitleWorld Academy of Science, Engineering and Technology
dc.subjectHALO structure
dc.subjectOptimization
dc.subjectP-type mosfets device
dc.subjectTaguchi method
dc.subjectGrowth temperature
dc.subjectMOSFET devices
dc.subjectOptimization
dc.subjectSilicides
dc.subjectSimulators
dc.subjectTaguchi methods
dc.subjectAnneal temperatures
dc.subjectDevice simulators
dc.subjectHalo implants
dc.subjectHALO structure
dc.subjectMetal-oxide-semiconductor field-effect transistor
dc.subjectMOSFETs
dc.subjectP-type
dc.subjectProcess parameters
dc.subjectProcess simulators
dc.subjectStructural optimization
dc.titleOptimization of HALO structure effects in 45nm p-type MOSFETs device using taguchi methoden_US
dc.typeArticleen_US
dspace.entity.typePublication
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