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Effect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering system

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dc.citedby0
dc.contributor.authorAbd Rahman M.N.en_US
dc.contributor.authorZuhdi A.W.M.en_US
dc.contributor.authorAmirulddin U.A.U.en_US
dc.contributor.authorIsah M.en_US
dc.contributor.authorAzman N.I.en_US
dc.contributor.authorArsad A.Z.en_US
dc.contributor.authorArzaee N.A.en_US
dc.contributor.authorMansor M.en_US
dc.contributor.authorShuhaimi A.en_US
dc.contributor.authorid57102327000en_US
dc.contributor.authorid56589966300en_US
dc.contributor.authorid26422804600en_US
dc.contributor.authorid57219626175en_US
dc.contributor.authorid56104480900en_US
dc.contributor.authorid56926685200en_US
dc.contributor.authorid57204034965en_US
dc.contributor.authorid57222998145en_US
dc.contributor.authorid55752997100en_US
dc.date.accessioned2025-03-03T07:41:33Z
dc.date.available2025-03-03T07:41:33Z
dc.date.issued2024
dc.description.abstractHigh-quality zinc oxide thin films doped with aluminium adatoms have effectively been fabricated on pristine soda-lime silica glass substrates via radio frequency magnetron sputtering system. The deposition temperature was varied to explore the impact of deposition regime transition of as-deposited Al:ZnO thin films on their performance as transparent conducting oxide layers. In particular, the depositions were conducted at room temperature, 100 �C, 200 �C, and 300 �C, allowing for a comprehensive assessment of the resulting films. The Raman spectra depicted the modulation of Raman bands in correlation with the deposition regime transition, illustrating the impact of thermal induction on various properties of the as-deposited aluminium-doped zinc oxide thin films. Atomic force microscopy reveals the transformation from nearly spherical to elongated shape structure was obtained as the deposition process shifted from kinetic limited to thermodynamic limited regimes. The phase analysis and grazing incident of x-ray diffractometer disclose a single crystal orientation has been achieved at thermodynamic limited regime. However, two different crystal planes were predominant comparing between the surface and structural of as-deposited aluminium-doped zinc oxide thin films. It is also evident that a highly transparent with low lattice strain and better carrier concentrations of as-deposited aluminium-doped zinc oxide thin films were realized at thermodynamic limited regimes. ? 2024 Elsevier Ltd and Techna Group S.r.l.en_US
dc.description.natureFinalen_US
dc.identifier.doi10.1016/j.ceramint.2024.08.158
dc.identifier.epage43081
dc.identifier.issue21
dc.identifier.scopus2-s2.0-85201756948
dc.identifier.spage43070
dc.identifier.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85201756948&doi=10.1016%2fj.ceramint.2024.08.158&partnerID=40&md5=e60a4addfcfd68203f4d238f4d63a681
dc.identifier.urihttps://irepository.uniten.edu.my/handle/123456789/36197
dc.identifier.volume50
dc.pagecount11
dc.publisherElsevier Ltden_US
dc.sourceScopus
dc.sourcetitleCeramics International
dc.subjectAluminum coatings
dc.subjectConductive films
dc.subjectCrystal atomic structure
dc.subjectCrystal lattices
dc.subjectDescaling
dc.subjectHard facing
dc.subjectMagnetron sputtering
dc.subjectTransparent conducting oxides
dc.subjectX ray diffraction analysis
dc.subjectZinc oxide
dc.subjectAluminum zinc oxides
dc.subjectAluminum-doped zinc oxide thin films
dc.subjectDeposition regime transition
dc.subjectDeposition regimes
dc.subjectEnergy
dc.subjectKinetic limited regime
dc.subjectLateral deposition
dc.subjectRegime transition
dc.subjectThermodynamic limited regime
dc.subjectVertical depositions
dc.subjectCrystal orientation
dc.titleEffect of deposition regime transition on the properties of Al:ZnO transparent conducting oxide layer by radio frequency magnetron sputtering systemen_US
dc.typeArticleen_US
dspace.entity.typePublication
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